JPS5674929A - Insulating layer forming method - Google Patents
Insulating layer forming methodInfo
- Publication number
- JPS5674929A JPS5674929A JP15185279A JP15185279A JPS5674929A JP S5674929 A JPS5674929 A JP S5674929A JP 15185279 A JP15185279 A JP 15185279A JP 15185279 A JP15185279 A JP 15185279A JP S5674929 A JPS5674929 A JP S5674929A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- injected
- ion
- layer
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To eliminate a boundary layer including a fault and polycrystal by a method wherein a substrate is controlled to conform with a temperature in which a heat diffusion and a chemical reaction are produced and ion of a concentration required for forming an equalized SiO2 or more is injected. CONSTITUTION:When ion is injected into a Si substrate which is retained in 200 deg.C or more, finally, a vicinity of a depth 6 reaches a sufficient concentration to form an equlized SiO2 layer. When ion is injected more, an excessive O2 is diffused by heat to react with a nonreaction Si. When an injection quantity is increased, a distribution of the O2 concentration to the depth direction varies (from 7 to 10). The sharp change of distribution becomes remarkable from an injection quantity 8 which is 1.5 times of the existing method (4.5X10<22>/cm<3>). When the concentration becomes 2 times, an extremely sharp distribution 10 is indicated. As a result thereof, no boundary layer exists utterly between a superficial mono crystal layer 11 and an internal compound layer 12 and the crystalline becomes outstandingly good, and if an IC is formed thereupon, its characteristic is good. And further, the thickness of an insulating layer can be accurately controlled by an injection energy and an injection quantity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15185279A JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15185279A JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5674929A true JPS5674929A (en) | 1981-06-20 |
| JPS6212658B2 JPS6212658B2 (en) | 1987-03-19 |
Family
ID=15527668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15185279A Granted JPS5674929A (en) | 1979-11-22 | 1979-11-22 | Insulating layer forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5674929A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3139904B2 (en) * | 1993-12-28 | 2001-03-05 | 新日本製鐵株式会社 | Method and apparatus for manufacturing semiconductor substrate |
| KR102484068B1 (en) | 2021-10-22 | 2023-01-04 | (주)코리아테크 | Stick type container |
| KR102482185B1 (en) | 2022-09-15 | 2022-12-29 | (주)코리아테크 | Stick type container |
-
1979
- 1979-11-22 JP JP15185279A patent/JPS5674929A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6212658B2 (en) | 1987-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5474682A (en) | Semiconductor and its manufacture | |
| JPS57126127A (en) | Diffusion treating method for semiconductor wafer | |
| JPS5674929A (en) | Insulating layer forming method | |
| Busen et al. | Ellipsometric Investigations of Boron‐Rich Layers on Silicon | |
| JPS5627940A (en) | Manufacture of semiconductor elements | |
| JPS575328A (en) | Growing method for semiconductor crystal | |
| JPS5618419A (en) | Manufacture of semiconductor device | |
| JPS56112743A (en) | Thin film semiconductor device and manufacture thereof | |
| JPS57106047A (en) | Manufacture of semiconductor integrated circuit device | |
| JPS55128828A (en) | Manufacture of semiconductor device | |
| JPS56148826A (en) | Manufacture of semiconductor device | |
| JPS5766628A (en) | Manufacture of semiconductor device | |
| JPS5582451A (en) | Manufacture of semiconductor device | |
| JPS5524459A (en) | Selective formation of silicon | |
| JPS5752128A (en) | Manufacture of semiconductor device | |
| JPS54161274A (en) | Manufacture of semiconductor device | |
| JPS57118647A (en) | Manufacture of semiconductor device | |
| JPS57194546A (en) | Semiconductor device and manufacture thereof | |
| JPS57112075A (en) | Insulating gate fet | |
| JPS57114239A (en) | Manufacture of semiconductor device | |
| JPS55165671A (en) | Preparation of semiconductor integrated circuit | |
| JPS54128678A (en) | Forming method of insulation film | |
| JPS5610935A (en) | Heat treatment of semiconductor wafer | |
| JPS5671953A (en) | Formation of semiconductor layer on insulated substrate | |
| JPS545653A (en) | Formation method of ion injection layer |