JPS55128828A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55128828A
JPS55128828A JP3728779A JP3728779A JPS55128828A JP S55128828 A JPS55128828 A JP S55128828A JP 3728779 A JP3728779 A JP 3728779A JP 3728779 A JP3728779 A JP 3728779A JP S55128828 A JPS55128828 A JP S55128828A
Authority
JP
Japan
Prior art keywords
film
ions
substrate
type
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3728779A
Other languages
Japanese (ja)
Inventor
Atsutomo Toi
Masakatsu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP3728779A priority Critical patent/JPS55128828A/en
Publication of JPS55128828A publication Critical patent/JPS55128828A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To perform treatment at a low temperature in a short time and prevent crystal defects when using Al to produce a p-type region in an n-type Si substrate, by injecting Al ions into the substrate, then coating the surface with an Si3N4 film and driving the ions inside under an inert atmosphere.
CONSTITUTION: To produce a p-type region in an N-type Si substrate 1, a p-type injection layer 2 is provided first by injecting a prescribed does of Al ions. The entire surface is then coated with an SiO2 film 3 and an Si3N4 film 5 which is produced by a CVD method or a low-temperature plasma nitride making method. The substrate and the films coated thereon are heated to 1200°C under an atmosphere of N2 to drive the injected Al ions to activate the p-type injection layer 2. Since not only the SiO3 film 3 but also the Si3N4 film 5 are provided, no abnormal phenomenon takes place as to the Al ions and the treatment temperature can be reduced and a noise characteristic is improved.
COPYRIGHT: (C)1980,JPO&Japio
JP3728779A 1979-03-28 1979-03-28 Manufacture of semiconductor device Pending JPS55128828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3728779A JPS55128828A (en) 1979-03-28 1979-03-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3728779A JPS55128828A (en) 1979-03-28 1979-03-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55128828A true JPS55128828A (en) 1980-10-06

Family

ID=12493487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3728779A Pending JPS55128828A (en) 1979-03-28 1979-03-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55128828A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3147535A1 (en) * 1980-12-04 1982-08-05 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
JPS62219515A (en) * 1986-03-19 1987-09-26 Fuji Electric Co Ltd Manufacture of semiconductor device
JPS633459A (en) * 1986-06-23 1988-01-08 Nec Corp Formation of diffused well

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3147535A1 (en) * 1980-12-04 1982-08-05 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
DE3147535C2 (en) * 1980-12-04 1988-07-28 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa, Jp
JPS62219515A (en) * 1986-03-19 1987-09-26 Fuji Electric Co Ltd Manufacture of semiconductor device
JPS633459A (en) * 1986-06-23 1988-01-08 Nec Corp Formation of diffused well

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