JPS54101662A - Inpurity diffusion - Google Patents

Inpurity diffusion

Info

Publication number
JPS54101662A
JPS54101662A JP874678A JP874678A JPS54101662A JP S54101662 A JPS54101662 A JP S54101662A JP 874678 A JP874678 A JP 874678A JP 874678 A JP874678 A JP 874678A JP S54101662 A JPS54101662 A JP S54101662A
Authority
JP
Japan
Prior art keywords
iii
film
group metal
sio
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP874678A
Other languages
Japanese (ja)
Inventor
Shigetoshi Takayanagi
Takashi Hirao
Kaoru Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP874678A priority Critical patent/JPS54101662A/en
Publication of JPS54101662A publication Critical patent/JPS54101662A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To diffuse selectively impurity deeply and uniformly by injecting ions and subjecting a III b-group metal to heat treatment at a temperature below the eutectic temperature of the metal and Si after sticking the III b-group metal in the diffusion method using III b-group metal as P-type impurity.
CONSTITUTION: SiO2 film 12 is formed on n-type Si substrate 11, and resistor 13 is applied to open a hole. Next, after Al film 14 is formed by the electron beam evaporation method, Ar ions are injected to lead in Al by knock-on, thus forming led-in layer 15. After that, resistor 13 is removed, and a SiO2 film is formed by the CVD method and is driven in, thereby forming an Al doping layer.
COPYRIGHT: (C)1979,JPO&Japio
JP874678A 1978-01-27 1978-01-27 Inpurity diffusion Pending JPS54101662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP874678A JPS54101662A (en) 1978-01-27 1978-01-27 Inpurity diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP874678A JPS54101662A (en) 1978-01-27 1978-01-27 Inpurity diffusion

Publications (1)

Publication Number Publication Date
JPS54101662A true JPS54101662A (en) 1979-08-10

Family

ID=11701489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP874678A Pending JPS54101662A (en) 1978-01-27 1978-01-27 Inpurity diffusion

Country Status (1)

Country Link
JP (1) JPS54101662A (en)

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