JPS54101662A - Inpurity diffusion - Google Patents
Inpurity diffusionInfo
- Publication number
- JPS54101662A JPS54101662A JP874678A JP874678A JPS54101662A JP S54101662 A JPS54101662 A JP S54101662A JP 874678 A JP874678 A JP 874678A JP 874678 A JP874678 A JP 874678A JP S54101662 A JPS54101662 A JP S54101662A
- Authority
- JP
- Japan
- Prior art keywords
- iii
- film
- group metal
- sio
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To diffuse selectively impurity deeply and uniformly by injecting ions and subjecting a III b-group metal to heat treatment at a temperature below the eutectic temperature of the metal and Si after sticking the III b-group metal in the diffusion method using III b-group metal as P-type impurity.
CONSTITUTION: SiO2 film 12 is formed on n-type Si substrate 11, and resistor 13 is applied to open a hole. Next, after Al film 14 is formed by the electron beam evaporation method, Ar ions are injected to lead in Al by knock-on, thus forming led-in layer 15. After that, resistor 13 is removed, and a SiO2 film is formed by the CVD method and is driven in, thereby forming an Al doping layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP874678A JPS54101662A (en) | 1978-01-27 | 1978-01-27 | Inpurity diffusion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP874678A JPS54101662A (en) | 1978-01-27 | 1978-01-27 | Inpurity diffusion |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54101662A true JPS54101662A (en) | 1979-08-10 |
Family
ID=11701489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP874678A Pending JPS54101662A (en) | 1978-01-27 | 1978-01-27 | Inpurity diffusion |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54101662A (en) |
-
1978
- 1978-01-27 JP JP874678A patent/JPS54101662A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5467778A (en) | Production of semiconductor device | |
JPS54101662A (en) | Inpurity diffusion | |
JPS5627965A (en) | Manufacture of semiconductor device | |
JPS5587429A (en) | Manufacture of semiconductor device | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS5565459A (en) | Manufacture of semiconductor device | |
JPS54101663A (en) | Aluminum diffusion method | |
JPS54151379A (en) | Manufactue for semiconductor device | |
JPS5618419A (en) | Manufacture of semiconductor device | |
JPS5538082A (en) | Formation for buried layer of semiconductor device | |
JPS5524468A (en) | Manufacture of semiconductor | |
JPS5593269A (en) | Manufacture of semiconductor device | |
JPS53137678A (en) | Manufacture for mos type semiconductor device | |
JPS55128828A (en) | Manufacture of semiconductor device | |
JPS5629322A (en) | Manufacture of semiconductor device | |
JPS5544701A (en) | Manufacturing transistor | |
JPS5522835A (en) | Manufacturing of transistor | |
JPS57138131A (en) | Manufacture of semiconductor device | |
JPS5272162A (en) | Production of semiconductor device | |
JPS54109384A (en) | Semiconductor device | |
JPS5210673A (en) | Manufacturing method of silicon semi-conductor device | |
JPS57204170A (en) | Manufacture of mos type field effect transistor | |
JPS5491079A (en) | Manufacture of semiconductor device | |
JPS5595322A (en) | Diffusing method of impurity | |
JPS5693315A (en) | Manufacture of semiconductor device |