JPS57118647A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57118647A
JPS57118647A JP439381A JP439381A JPS57118647A JP S57118647 A JPS57118647 A JP S57118647A JP 439381 A JP439381 A JP 439381A JP 439381 A JP439381 A JP 439381A JP S57118647 A JPS57118647 A JP S57118647A
Authority
JP
Japan
Prior art keywords
oxygen
wafer
semiconductor device
decreasing
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP439381A
Other languages
Japanese (ja)
Inventor
Koichiro Honda
Akira Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP439381A priority Critical patent/JPS57118647A/en
Publication of JPS57118647A publication Critical patent/JPS57118647A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To improve the reliability of characteristics of the element for the subject semiconductor device by a method wherein an Si wafer, having the decreasing coefficienct of oxygen below the prescribed value when the Si wafer with the oxygen density below the prescribed value is heat-treated at the prescribed temperature, is used on a substrate. CONSTITUTION:When a Cz-Si single crystal wafer is heat-treated in the temperature, having a high oxygen decreasing coefficient, of 700 deg.C for ninety-six hours, an etch pit in the state of deposited oxygen is seen, and the decreasing coefficient of oxygen shows 0.2 or above and the density of oxygen shows 1.0- 10<18>cm<3> or above. By using such an Si substrate as above, having reduced oxygen which induces the generation of crystal defects, the reliability of the element characteristics can be improved.
JP439381A 1981-01-14 1981-01-14 Manufacture of semiconductor device Pending JPS57118647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP439381A JPS57118647A (en) 1981-01-14 1981-01-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP439381A JPS57118647A (en) 1981-01-14 1981-01-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57118647A true JPS57118647A (en) 1982-07-23

Family

ID=11583101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP439381A Pending JPS57118647A (en) 1981-01-14 1981-01-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57118647A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0226031A (en) * 1988-07-14 1990-01-29 Toshiba Ceramics Co Ltd Silicon wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0226031A (en) * 1988-07-14 1990-01-29 Toshiba Ceramics Co Ltd Silicon wafer

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