JPS57166397A - Converting method of silicon wafer into single crystal - Google Patents
Converting method of silicon wafer into single crystalInfo
- Publication number
- JPS57166397A JPS57166397A JP4859481A JP4859481A JPS57166397A JP S57166397 A JPS57166397 A JP S57166397A JP 4859481 A JP4859481 A JP 4859481A JP 4859481 A JP4859481 A JP 4859481A JP S57166397 A JPS57166397 A JP S57166397A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon wafer
- oxide film
- polycrystalline
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To convert a wide range on an oxide film into a single crystal, by growing a polycrystalline silicon layer on a thermal oxide film formed on a silicon wafer, and irradiating the polycrystalline layer with energy to form the single crystal.
CONSTITUTION: A thermal oxide film 2 (SiO2) is grown on a silicon wafer 1, and window opened parts (3a) are patterned on the film 2 to grow a polycrystalline silicon layer (4a) thereon. The polycrystalline layer (4a) is then etched in the form of strips and patterned in the direction perpendicular to the window opened parts (3a). Energy-rich rays 5 are applied in parallel with the stripes to convert the whole surface of the film 2 into a single crystal. Thus, a wide range of the oxide film 2 is converted into the single crystal.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4859481A JPS57166397A (en) | 1981-03-31 | 1981-03-31 | Converting method of silicon wafer into single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4859481A JPS57166397A (en) | 1981-03-31 | 1981-03-31 | Converting method of silicon wafer into single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57166397A true JPS57166397A (en) | 1982-10-13 |
JPH024559B2 JPH024559B2 (en) | 1990-01-29 |
Family
ID=12807727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4859481A Granted JPS57166397A (en) | 1981-03-31 | 1981-03-31 | Converting method of silicon wafer into single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57166397A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6090898A (en) * | 1983-10-21 | 1985-05-22 | Agency Of Ind Science & Technol | Formation of single crystal silicon film |
JPS62130509A (en) * | 1985-12-02 | 1987-06-12 | Agency Of Ind Science & Technol | Manufacture of semiconductor substrate |
JPH0282518A (en) * | 1988-09-20 | 1990-03-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor single crystal layer |
-
1981
- 1981-03-31 JP JP4859481A patent/JPS57166397A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6090898A (en) * | 1983-10-21 | 1985-05-22 | Agency Of Ind Science & Technol | Formation of single crystal silicon film |
JPS62130509A (en) * | 1985-12-02 | 1987-06-12 | Agency Of Ind Science & Technol | Manufacture of semiconductor substrate |
JPH0282518A (en) * | 1988-09-20 | 1990-03-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor single crystal layer |
Also Published As
Publication number | Publication date |
---|---|
JPH024559B2 (en) | 1990-01-29 |
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