JPS5297690A - Production of solar cells - Google Patents

Production of solar cells

Info

Publication number
JPS5297690A
JPS5297690A JP1314376A JP1314376A JPS5297690A JP S5297690 A JPS5297690 A JP S5297690A JP 1314376 A JP1314376 A JP 1314376A JP 1314376 A JP1314376 A JP 1314376A JP S5297690 A JPS5297690 A JP S5297690A
Authority
JP
Japan
Prior art keywords
solar cells
production
film
grain boundary
thin polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1314376A
Other languages
Japanese (ja)
Other versions
JPS5513596B2 (en
Inventor
Hideo Iwasaki
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1314376A priority Critical patent/JPS5297690A/en
Publication of JPS5297690A publication Critical patent/JPS5297690A/en
Publication of JPS5513596B2 publication Critical patent/JPS5513596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To reduce leakage current through grain boundary and rectifying characteristics are improved by anodizing a thin polycrystalline Si film which is crystal-grown on an Al substrate to provide insulation characteristics to the deposited Al existing at the grain boundary, then forming solar cells using this thin polycrystalline Si film.
COPYRIGHT: (C)1977,JPO&Japio
JP1314376A 1976-02-12 1976-02-12 Production of solar cells Granted JPS5297690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1314376A JPS5297690A (en) 1976-02-12 1976-02-12 Production of solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1314376A JPS5297690A (en) 1976-02-12 1976-02-12 Production of solar cells

Publications (2)

Publication Number Publication Date
JPS5297690A true JPS5297690A (en) 1977-08-16
JPS5513596B2 JPS5513596B2 (en) 1980-04-10

Family

ID=11824927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1314376A Granted JPS5297690A (en) 1976-02-12 1976-02-12 Production of solar cells

Country Status (1)

Country Link
JP (1) JPS5297690A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124483A (en) * 2001-10-17 2003-04-25 Toyota Motor Corp Photovoltaic element
US6815077B1 (en) * 2003-05-20 2004-11-09 Matrix Semiconductor, Inc. Low temperature, low-resistivity heavily doped p-type polysilicon deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124483A (en) * 2001-10-17 2003-04-25 Toyota Motor Corp Photovoltaic element
US6815077B1 (en) * 2003-05-20 2004-11-09 Matrix Semiconductor, Inc. Low temperature, low-resistivity heavily doped p-type polysilicon deposition
US7419701B2 (en) 2003-05-20 2008-09-02 Sandisk 3D Llc Low-temperature, low-resistivity heavily doped p-type polysilicon deposition

Also Published As

Publication number Publication date
JPS5513596B2 (en) 1980-04-10

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