JPS5382190A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS5382190A
JPS5382190A JP15887976A JP15887976A JPS5382190A JP S5382190 A JPS5382190 A JP S5382190A JP 15887976 A JP15887976 A JP 15887976A JP 15887976 A JP15887976 A JP 15887976A JP S5382190 A JPS5382190 A JP S5382190A
Authority
JP
Japan
Prior art keywords
solar cell
substrate
conductive layer
thickness
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15887976A
Other languages
Japanese (ja)
Inventor
Takeshi Obikawa
Sadatsugu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HAMASAWA KOGYO KK
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
HAMASAWA KOGYO KK
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HAMASAWA KOGYO KK, Seiko Epson Corp, Suwa Seikosha KK filed Critical HAMASAWA KOGYO KK
Priority to JP15887976A priority Critical patent/JPS5382190A/en
Publication of JPS5382190A publication Critical patent/JPS5382190A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

PURPOSE: To obtain the high converting efficiency even with the thickness of substrate of less than 150μm, by forming the conductive layer having the same conduction type at the back of the silicon solar cells.
COPYRIGHT: (C)1978,JPO&Japio
JP15887976A 1976-12-27 1976-12-27 Solar cell Pending JPS5382190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15887976A JPS5382190A (en) 1976-12-27 1976-12-27 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15887976A JPS5382190A (en) 1976-12-27 1976-12-27 Solar cell

Publications (1)

Publication Number Publication Date
JPS5382190A true JPS5382190A (en) 1978-07-20

Family

ID=15681379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15887976A Pending JPS5382190A (en) 1976-12-27 1976-12-27 Solar cell

Country Status (1)

Country Link
JP (1) JPS5382190A (en)

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