JPS5571646A - Glass composition - Google Patents

Glass composition

Info

Publication number
JPS5571646A
JPS5571646A JP14427778A JP14427778A JPS5571646A JP S5571646 A JPS5571646 A JP S5571646A JP 14427778 A JP14427778 A JP 14427778A JP 14427778 A JP14427778 A JP 14427778A JP S5571646 A JPS5571646 A JP S5571646A
Authority
JP
Japan
Prior art keywords
glass
compsn
thermal expansion
expansion coefficient
charge density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14427778A
Other languages
Japanese (ja)
Inventor
Yutaka Misawa
Komei Yatsuno
Shinichi Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14427778A priority Critical patent/JPS5571646A/en
Publication of JPS5571646A publication Critical patent/JPS5571646A/en
Pending legal-status Critical Current

Links

Landscapes

  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To enable the surface charge density and thermal expansion coefficient of glass to be accurately controlled to desired values by mixing ZnO-B2O3-SiO2 three- component glass of different compsn. ratios into the glass.
CONSTITUTION: ZnO-B2O3-SiO2 three-component glass remarkably changes its surface charge density and thermal expansion coefficient according to its compsn. ratio. By utilizing this property a glass compsn. for passivation of a semiconductor element, a glass-coated semiconductor, etc. can be controlled to desired values in surface charge density and thermal expansion coefficient by mixing the glass of different compsn. ratios. By this method a glass compsn. having desired press. resistance, etc. is obtd. in a high yield.
COPYRIGHT: (C)1980,JPO&Japio
JP14427778A 1978-11-24 1978-11-24 Glass composition Pending JPS5571646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14427778A JPS5571646A (en) 1978-11-24 1978-11-24 Glass composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14427778A JPS5571646A (en) 1978-11-24 1978-11-24 Glass composition

Publications (1)

Publication Number Publication Date
JPS5571646A true JPS5571646A (en) 1980-05-29

Family

ID=15358336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14427778A Pending JPS5571646A (en) 1978-11-24 1978-11-24 Glass composition

Country Status (1)

Country Link
JP (1) JPS5571646A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164342A (en) * 1988-10-14 1992-11-17 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5258335A (en) * 1988-10-14 1993-11-02 Ferro Corporation Low dielectric, low temperature fired glass ceramics
WO2013168236A1 (en) * 2012-05-08 2013-11-14 新電元工業株式会社 Resin-sealed semiconductor device and production method for resin-sealed semiconductor device
JP5827398B2 (en) * 2012-05-08 2015-12-02 新電元工業株式会社 Method for manufacturing glass composition for protecting semiconductor junction, method for manufacturing semiconductor device, and semiconductor device
JPWO2013168623A1 (en) * 2012-05-08 2016-01-07 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164342A (en) * 1988-10-14 1992-11-17 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5258335A (en) * 1988-10-14 1993-11-02 Ferro Corporation Low dielectric, low temperature fired glass ceramics
WO2013168236A1 (en) * 2012-05-08 2013-11-14 新電元工業株式会社 Resin-sealed semiconductor device and production method for resin-sealed semiconductor device
JP5827398B2 (en) * 2012-05-08 2015-12-02 新電元工業株式会社 Method for manufacturing glass composition for protecting semiconductor junction, method for manufacturing semiconductor device, and semiconductor device
JP5827397B2 (en) * 2012-05-08 2015-12-02 新電元工業株式会社 Resin-sealed semiconductor device and method for manufacturing resin-sealed semiconductor device
JPWO2013168623A1 (en) * 2012-05-08 2016-01-07 新電元工業株式会社 Semiconductor junction protecting glass composition, semiconductor device manufacturing method, and semiconductor device

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