JPS57139946A - Forming method for buried insulating layer - Google Patents

Forming method for buried insulating layer

Info

Publication number
JPS57139946A
JPS57139946A JP2498381A JP2498381A JPS57139946A JP S57139946 A JPS57139946 A JP S57139946A JP 2498381 A JP2498381 A JP 2498381A JP 2498381 A JP2498381 A JP 2498381A JP S57139946 A JPS57139946 A JP S57139946A
Authority
JP
Japan
Prior art keywords
layer
dosing
oxygen
low
oxygen ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2498381A
Other languages
Japanese (ja)
Other versions
JPS6362106B2 (en
Inventor
Takayoshi Hayashi
Hamao Okamoto
Masao Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2498381A priority Critical patent/JPS57139946A/en
Publication of JPS57139946A publication Critical patent/JPS57139946A/en
Publication of JPS6362106B2 publication Critical patent/JPS6362106B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To form the buried SiO2 layer through the implantation of oxygen ions in the high quantity of dosing to a single crystal Si substrate, to shape epitaxial Si onto a surface Si layer and to obtain a Si layer having the low concentration of oxygen contained through the implantation of oxygen ions in the low quantity of dosing. CONSTITUTION:The oxygen ions in the high quantity of dosing of 2.4X10<18> are implanted in the single crystal Si substrate, and the buried SiO2 layer 1 is shaped. The crystallinity of the surface Si layer 2 is improved through annealing, and the epitaxial Si layer 3 is formed only by the same thickness as the surface silicon layer 2. When the oxygen ions in the low quantity of dosing of 0.6X 10<18>cm<-2> are implanted in the buried SiO2 layer, oxygen under a Gaussian distribution condition having low concentration in distributed to the epitaxial layer 3. Accordingly, the Si layer having the low oxygen concentration of one figure or more can be formed onto the buried SiO2.
JP2498381A 1981-02-24 1981-02-24 Forming method for buried insulating layer Granted JPS57139946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2498381A JPS57139946A (en) 1981-02-24 1981-02-24 Forming method for buried insulating layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2498381A JPS57139946A (en) 1981-02-24 1981-02-24 Forming method for buried insulating layer

Publications (2)

Publication Number Publication Date
JPS57139946A true JPS57139946A (en) 1982-08-30
JPS6362106B2 JPS6362106B2 (en) 1988-12-01

Family

ID=12153212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2498381A Granted JPS57139946A (en) 1981-02-24 1981-02-24 Forming method for buried insulating layer

Country Status (1)

Country Link
JP (1) JPS57139946A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02237033A (en) * 1989-03-09 1990-09-19 Nissan Motor Co Ltd Manufacture of semiconductor substrate
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02237033A (en) * 1989-03-09 1990-09-19 Nissan Motor Co Ltd Manufacture of semiconductor substrate
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth

Also Published As

Publication number Publication date
JPS6362106B2 (en) 1988-12-01

Similar Documents

Publication Publication Date Title
JPS6417444A (en) Manufacture of insulation buried in semiconductor substrate by ion implantation and construction of semiconductor containing the insulation
JPS5587444A (en) Method of forming insulating film on semiconductor surface
JPS57126131A (en) Manufacture of semiconductor device
JPS5687340A (en) Semiconductor device and manufacture thereof
JPS6472531A (en) Method of building up oxide on ion-implanted polycrystalline silicon surface
JPS57139946A (en) Forming method for buried insulating layer
JPS5740940A (en) Semiconductor device
JPS5583256A (en) Semiconductor integrated circuit
JPS57186284A (en) Manufacture of magnetic bubble memory element
JPS5568651A (en) Manufacturing method of semiconductor device
JPS57106047A (en) Manufacture of semiconductor integrated circuit device
JPS57196542A (en) Semiconductor integrated circuit device and manufacture thereof
JPS57128943A (en) Insulation isolated semiconductor integrated device and manufacture thereof
JPS5780768A (en) Semiconductor device
JPS57186326A (en) Ion implanting method
JPS57134924A (en) Production of semiconductive single-crystal thin film
JPS6436069A (en) Manufacture of semiconductor device
JPS5688322A (en) Processing method for semiconductor substrate
JPS5737881A (en) Production of semiconductor device
JPS54122092A (en) Manufacture of semiconductor integrated circuit
JPS5272162A (en) Production of semiconductor device
JPS5395570A (en) Forming method of epitaxial layer
JPS54128678A (en) Forming method of insulation film
JPS57106144A (en) Manufacture of semiconductor device
JPS5617013A (en) Manufacture of semiconductor device