JPS57186326A - Ion implanting method - Google Patents

Ion implanting method

Info

Publication number
JPS57186326A
JPS57186326A JP7162181A JP7162181A JPS57186326A JP S57186326 A JPS57186326 A JP S57186326A JP 7162181 A JP7162181 A JP 7162181A JP 7162181 A JP7162181 A JP 7162181A JP S57186326 A JPS57186326 A JP S57186326A
Authority
JP
Japan
Prior art keywords
layer
ions
impurity
substrate
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7162181A
Other languages
Japanese (ja)
Inventor
Asamitsu Tosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7162181A priority Critical patent/JPS57186326A/en
Publication of JPS57186326A publication Critical patent/JPS57186326A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Abstract

PURPOSE:To obtain a uniform ion implantation layer with good reproducibility by implanting O2 or B ions of the first impurity forming a deep impurity level to produce the maximum density position in a region deeper than 4,000Angstrom from the surface of a compound semiconductor substrate and the second impurity ions forming an active layer in a depth less than 2,000Angstrom . CONSTITUTION:O2 or B ions forming a deep impurity level are implanted with dosage of 10<13>/cm<2> to produce the maximum density position in a region deeper than 4,000Angstrom from the surface of a GaAs substrate 31 with high resistance contained with much quantity of Cr. Then, Si<+> ions 33 are implanted in an active layer with dosage of 4X10<12>/cm<2> in a depth region less than 2,000Angstrom from the surface of the substrate 31, an SiO2 film 34 is produced on the surface, the layer is heat treated at 850 deg.C in H2 atmosphere to produce an active layer 35 having uniform impurity density. Thus, the Cr in the substrate 31 does not reach the layer 35, and the uniformly implanted layer can be obtained with good reproducibility.
JP7162181A 1981-05-13 1981-05-13 Ion implanting method Pending JPS57186326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7162181A JPS57186326A (en) 1981-05-13 1981-05-13 Ion implanting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7162181A JPS57186326A (en) 1981-05-13 1981-05-13 Ion implanting method

Publications (1)

Publication Number Publication Date
JPS57186326A true JPS57186326A (en) 1982-11-16

Family

ID=13465897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7162181A Pending JPS57186326A (en) 1981-05-13 1981-05-13 Ion implanting method

Country Status (1)

Country Link
JP (1) JPS57186326A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047428A (en) * 1983-08-26 1985-03-14 Fujitsu Ltd Manufacture of semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047428A (en) * 1983-08-26 1985-03-14 Fujitsu Ltd Manufacture of semiconductor device

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