JPS57196529A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57196529A JPS57196529A JP8139381A JP8139381A JPS57196529A JP S57196529 A JPS57196529 A JP S57196529A JP 8139381 A JP8139381 A JP 8139381A JP 8139381 A JP8139381 A JP 8139381A JP S57196529 A JPS57196529 A JP S57196529A
- Authority
- JP
- Japan
- Prior art keywords
- carrier density
- ions
- region
- implantation
- density distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 4
- 238000002513 implantation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain a desired carrier density distribution by implanting ions in the first region of a semiconductor substrate, finding the carrier density distribution, setting a desired condition of implantation of ions, and forming a desired conductive semiconductor layer in the second region based on said condition of implantation. CONSTITUTION:A positive region forming a part of a half-insulated GaAs substrate is cut off, Si ions are implanted therein, and an N type conductive layer is formed through heat treatment in an ambience of argon by using an Si3N4 film as a heat treatment protection film. Thereafter, a Schottky diode is formed by a conventional method, a carrier density distribution is found by measuring a capacity-voltage characteristic, and thereby an amount of compensated impurities contained in half-insulated GaAs is calculated. In addition, the relationship between a doner density and a carrier density is found, and a semiconductor device having a desired carrier density is obtained by using the above-stated relations as conditions of implantation of ions in the second region of a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8139381A JPS57196529A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8139381A JPS57196529A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57196529A true JPS57196529A (en) | 1982-12-02 |
Family
ID=13745051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8139381A Pending JPS57196529A (en) | 1981-05-27 | 1981-05-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196529A (en) |
-
1981
- 1981-05-27 JP JP8139381A patent/JPS57196529A/en active Pending
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