JPS57133673A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57133673A JPS57133673A JP1949681A JP1949681A JPS57133673A JP S57133673 A JPS57133673 A JP S57133673A JP 1949681 A JP1949681 A JP 1949681A JP 1949681 A JP1949681 A JP 1949681A JP S57133673 A JPS57133673 A JP S57133673A
- Authority
- JP
- Japan
- Prior art keywords
- region
- mask
- layer
- nitride film
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To form a base, etc. of a transistor accurately, and to improve characteristics by shaping a mask region consisting of a nitride film containing Ga to the predetermined region of a semiconductor substrate and forming an impurity introducing region surrounded by the mask region. CONSTITUTION:A thermal oxide film 9 is shaped to an N type epitaxial layer 1 on a substrate 2, windows 17 are molded to the mask layer forming region, and N ions are implanted. The CVD nitride film 13' is deposited onto the whole surface, and Ga ions are implanted by energy, the range thereof is made larger than the thickness of the film 13' and smaller than the range of the N ions, while using a resist layer 19 as a mask. GaIs diffused through heat treatment, and a base region 4 and a guard ring layer 7 are formed while the mask layer 6 consisting of the nitride film containing Ga is shaped. An emitter region 5 and a wiring region 8 are diffused, a PSG film 10 and electrodes 12, 15, 3 are formed, and the transistor is completed. Accordingly, an element in which a diffusion layer is shaped accurately at a desired position can be manufactured because the thermal stress of the nitride film mask is reduced and the generation of a crack, etc. can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1949681A JPS57133673A (en) | 1981-02-12 | 1981-02-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1949681A JPS57133673A (en) | 1981-02-12 | 1981-02-12 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57133673A true JPS57133673A (en) | 1982-08-18 |
Family
ID=12000975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1949681A Pending JPS57133673A (en) | 1981-02-12 | 1981-02-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57133673A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4881113A (en) * | 1985-10-31 | 1989-11-14 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuits with a protection device |
-
1981
- 1981-02-12 JP JP1949681A patent/JPS57133673A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4881113A (en) * | 1985-10-31 | 1989-11-14 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuits with a protection device |
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