JPS5681977A - Variable capacity diode - Google Patents
Variable capacity diodeInfo
- Publication number
- JPS5681977A JPS5681977A JP15911979A JP15911979A JPS5681977A JP S5681977 A JPS5681977 A JP S5681977A JP 15911979 A JP15911979 A JP 15911979A JP 15911979 A JP15911979 A JP 15911979A JP S5681977 A JPS5681977 A JP S5681977A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- substrate
- covered
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high capacity variation ratio in a low voltage region by diffusing As in an Si substrate by an ion implantation process when forming a variable capacity diode. CONSTITUTION:An N<-> type layer 1 is epitaxially grown on an N type Si substrate 2, an N type region 4 is diffused therein, and a P type region 3 is formed around the region 4. In forming the region 4, ion implantation process is used, As ions are implanted, and are conducted to penetrate through the region 3. Then, the entire surface is covered with oxide 5, a window is opened, an aluminum wire layer 6 is mounted on the region 4, and an Au electrode layer 7 is covered also on the back surface of the substrate 2. Thereafter, it is annealed at 1,150 deg.C, with As density of 2X10<17>-5X10<14> pieces/cm<3> over the distance of 0.1-0.5mum from the junction, and the density variation therebetween is abruptly varied. Thus, there can be obtained a junction capacity varying linearly from 400pF to 25pF between 1 and 6 volts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15911979A JPS5681977A (en) | 1979-12-10 | 1979-12-10 | Variable capacity diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15911979A JPS5681977A (en) | 1979-12-10 | 1979-12-10 | Variable capacity diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5681977A true JPS5681977A (en) | 1981-07-04 |
Family
ID=15686647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15911979A Pending JPS5681977A (en) | 1979-12-10 | 1979-12-10 | Variable capacity diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5681977A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
| EP1139434A2 (en) | 2000-03-29 | 2001-10-04 | Tyco Electronics Corporation | Variable capacity diode with hyperabrubt junction profile |
| EP1164643A2 (en) * | 2000-06-07 | 2001-12-19 | Nec Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
-
1979
- 1979-12-10 JP JP15911979A patent/JPS5681977A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
| EP1139434A2 (en) | 2000-03-29 | 2001-10-04 | Tyco Electronics Corporation | Variable capacity diode with hyperabrubt junction profile |
| EP1139434A3 (en) * | 2000-03-29 | 2003-12-10 | Tyco Electronics Corporation | Variable capacity diode with hyperabrubt junction profile |
| EP1164643A2 (en) * | 2000-06-07 | 2001-12-19 | Nec Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| EP1164643A3 (en) * | 2000-06-07 | 2004-09-29 | NEC Electronics Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
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