JPS6455865A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6455865A JPS6455865A JP21361387A JP21361387A JPS6455865A JP S6455865 A JPS6455865 A JP S6455865A JP 21361387 A JP21361387 A JP 21361387A JP 21361387 A JP21361387 A JP 21361387A JP S6455865 A JPS6455865 A JP S6455865A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- ions
- insulating film
- region
- insulating films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To decrease fluctuation in element characteristics and the formation of a short channel, by depositing side walls of first and second insulating films twice separately, implanting phosphorus ions so that a film is not formed on the side wall that is covered with the first insulating film, and implanting arsenic ions before and after the formation of the side walls. CONSTITUTION:With a gate electrode 3 as a mask, arsenic ions (or antimony ions) are implanted in a semiconductor silicon substrate 1. Thus an n<-> type arsenic impurity region 11 is formed. Then, a first CVD SiO2 insulating film 15 is deposited on the entire surface by a chemical vapor growth method. With the gate electrode 3 and the first insulating film 15 on the side surface of the gate electrode as masks, phosphorus ions are implanted from the upper part, and an n<-> type phosphorus impurity region 22, which is deeper than said n<-> type region 11, is formed. Then, a second CVD SiO2 insulating film 16 is deposited on the entire surface. The first and second insulating films are vertically etched away. The first and second insulating films are made to remain only on the side surface of the gate electrode. Then, with the gate electrode 3 and the first and second insulating films on the side surface of the gate electrode as masks, arsenic ions (or antimony ions) are implanted. An n<-> source region 20 and a drain region 20, which are deeper that said n<-> type region, are formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21361387A JPS6455865A (en) | 1987-08-26 | 1987-08-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21361387A JPS6455865A (en) | 1987-08-26 | 1987-08-26 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6455865A true JPS6455865A (en) | 1989-03-02 |
Family
ID=16642075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21361387A Pending JPS6455865A (en) | 1987-08-26 | 1987-08-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6455865A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0399441A (en) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPH04255234A (en) * | 1991-02-07 | 1992-09-10 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
KR100259438B1 (en) * | 1991-05-10 | 2000-06-15 | 이데이 노부유끼 | Method for fabricating gate insulating layer |
-
1987
- 1987-08-26 JP JP21361387A patent/JPS6455865A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0399441A (en) * | 1989-09-12 | 1991-04-24 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
JPH04255234A (en) * | 1991-02-07 | 1992-09-10 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
KR100259438B1 (en) * | 1991-05-10 | 2000-06-15 | 이데이 노부유끼 | Method for fabricating gate insulating layer |
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