JPS6469027A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6469027A
JPS6469027A JP22789687A JP22789687A JPS6469027A JP S6469027 A JPS6469027 A JP S6469027A JP 22789687 A JP22789687 A JP 22789687A JP 22789687 A JP22789687 A JP 22789687A JP S6469027 A JPS6469027 A JP S6469027A
Authority
JP
Japan
Prior art keywords
trench
oxide film
silicon oxide
silicon substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22789687A
Other languages
Japanese (ja)
Inventor
Yoshimi Shiotani
Kenichi Hizuya
Yoshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22789687A priority Critical patent/JPS6469027A/en
Publication of JPS6469027A publication Critical patent/JPS6469027A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To improve insulating characteristics by a method wherein fluorine or impurity ions are implanted to the bottom of a trench formed to a silicon substrate, a silicon oxide film is deposited in the trench through oxidation in an oxygen atmosphere, space in the upper section of the silicon oxide film is buried further with an insulator and the whole surface of the silicon substrate is flattened through etching. CONSTITUTION:A silicon oxide film 2 shaped onto the surface of a silicon substrate 1 is patterned, a trench 3 is formed through trench etching, and fluorine or impurity ions are implanted only to the bottom of the trench 3. Accelerating oxidation having a high oxide-film growth rate is conducted through oxidation in an oxygen atmosphere, and a silicon oxide film 4 quickly deposits from the bottom of the trench 4. A silicon oxide film 5 is shaped to a section, in which the silicon oxide film 4 does not deposit yet, in an upper section in the trench 3, and the inside of the trench 3 is buried. The excess silicon oxide film 5 on the surface of the silicon substrate 1 is removed through whole-surface etching, thus flattening the surface. Accordingly, the inside of the trench, in which no 'cavity' is generated and which has excellent quality, can be buried, thus improving insulating characteristics.
JP22789687A 1987-09-10 1987-09-10 Manufacture of semiconductor device Pending JPS6469027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22789687A JPS6469027A (en) 1987-09-10 1987-09-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22789687A JPS6469027A (en) 1987-09-10 1987-09-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6469027A true JPS6469027A (en) 1989-03-15

Family

ID=16868007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22789687A Pending JPS6469027A (en) 1987-09-10 1987-09-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6469027A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272150B1 (en) * 1996-03-25 2001-01-15 니시무로 타이죠 Manufacturing Method of Semiconductor Device
US6265743B1 (en) 1997-04-11 2001-07-24 Mitsubishi Denki Kabushiki Kaisha Trench type element isolation structure
KR100313523B1 (en) * 1999-10-09 2001-11-15 김영환 Manufacturing method for isolation in semiconductor device
KR100468674B1 (en) * 1997-07-24 2005-03-16 삼성전자주식회사 Isolation method of semiconductor device
KR100532406B1 (en) * 1999-08-10 2005-11-30 삼성전자주식회사 Method for forming trench isolation using selective epitaxial growth and part oxidation in semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272150B1 (en) * 1996-03-25 2001-01-15 니시무로 타이죠 Manufacturing Method of Semiconductor Device
US6265743B1 (en) 1997-04-11 2001-07-24 Mitsubishi Denki Kabushiki Kaisha Trench type element isolation structure
US6372604B1 (en) 1997-04-11 2002-04-16 Mitsubishi Denki Kabushiki Kaisha Method for forming a trench type element isolation structure and trench type element isolation structure
KR100468674B1 (en) * 1997-07-24 2005-03-16 삼성전자주식회사 Isolation method of semiconductor device
KR100532406B1 (en) * 1999-08-10 2005-11-30 삼성전자주식회사 Method for forming trench isolation using selective epitaxial growth and part oxidation in semiconductor device
KR100313523B1 (en) * 1999-10-09 2001-11-15 김영환 Manufacturing method for isolation in semiconductor device

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