JPS6469027A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6469027A JPS6469027A JP22789687A JP22789687A JPS6469027A JP S6469027 A JPS6469027 A JP S6469027A JP 22789687 A JP22789687 A JP 22789687A JP 22789687 A JP22789687 A JP 22789687A JP S6469027 A JPS6469027 A JP S6469027A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- oxide film
- silicon oxide
- silicon substrate
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To improve insulating characteristics by a method wherein fluorine or impurity ions are implanted to the bottom of a trench formed to a silicon substrate, a silicon oxide film is deposited in the trench through oxidation in an oxygen atmosphere, space in the upper section of the silicon oxide film is buried further with an insulator and the whole surface of the silicon substrate is flattened through etching. CONSTITUTION:A silicon oxide film 2 shaped onto the surface of a silicon substrate 1 is patterned, a trench 3 is formed through trench etching, and fluorine or impurity ions are implanted only to the bottom of the trench 3. Accelerating oxidation having a high oxide-film growth rate is conducted through oxidation in an oxygen atmosphere, and a silicon oxide film 4 quickly deposits from the bottom of the trench 4. A silicon oxide film 5 is shaped to a section, in which the silicon oxide film 4 does not deposit yet, in an upper section in the trench 3, and the inside of the trench 3 is buried. The excess silicon oxide film 5 on the surface of the silicon substrate 1 is removed through whole-surface etching, thus flattening the surface. Accordingly, the inside of the trench, in which no 'cavity' is generated and which has excellent quality, can be buried, thus improving insulating characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22789687A JPS6469027A (en) | 1987-09-10 | 1987-09-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22789687A JPS6469027A (en) | 1987-09-10 | 1987-09-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6469027A true JPS6469027A (en) | 1989-03-15 |
Family
ID=16868007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22789687A Pending JPS6469027A (en) | 1987-09-10 | 1987-09-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469027A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100272150B1 (en) * | 1996-03-25 | 2001-01-15 | 니시무로 타이죠 | Manufacturing Method of Semiconductor Device |
US6265743B1 (en) | 1997-04-11 | 2001-07-24 | Mitsubishi Denki Kabushiki Kaisha | Trench type element isolation structure |
KR100313523B1 (en) * | 1999-10-09 | 2001-11-15 | 김영환 | Manufacturing method for isolation in semiconductor device |
KR100468674B1 (en) * | 1997-07-24 | 2005-03-16 | 삼성전자주식회사 | Isolation method of semiconductor device |
KR100532406B1 (en) * | 1999-08-10 | 2005-11-30 | 삼성전자주식회사 | Method for forming trench isolation using selective epitaxial growth and part oxidation in semiconductor device |
-
1987
- 1987-09-10 JP JP22789687A patent/JPS6469027A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100272150B1 (en) * | 1996-03-25 | 2001-01-15 | 니시무로 타이죠 | Manufacturing Method of Semiconductor Device |
US6265743B1 (en) | 1997-04-11 | 2001-07-24 | Mitsubishi Denki Kabushiki Kaisha | Trench type element isolation structure |
US6372604B1 (en) | 1997-04-11 | 2002-04-16 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a trench type element isolation structure and trench type element isolation structure |
KR100468674B1 (en) * | 1997-07-24 | 2005-03-16 | 삼성전자주식회사 | Isolation method of semiconductor device |
KR100532406B1 (en) * | 1999-08-10 | 2005-11-30 | 삼성전자주식회사 | Method for forming trench isolation using selective epitaxial growth and part oxidation in semiconductor device |
KR100313523B1 (en) * | 1999-10-09 | 2001-11-15 | 김영환 | Manufacturing method for isolation in semiconductor device |
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