GB1494569A - Method of mosigfet fabrication - Google Patents

Method of mosigfet fabrication

Info

Publication number
GB1494569A
GB1494569A GB1076275A GB1076275A GB1494569A GB 1494569 A GB1494569 A GB 1494569A GB 1076275 A GB1076275 A GB 1076275A GB 1076275 A GB1076275 A GB 1076275A GB 1494569 A GB1494569 A GB 1494569A
Authority
GB
United Kingdom
Prior art keywords
substrate
layer
dopant
sio
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1076275A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1494569A publication Critical patent/GB1494569A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1494569 Semi-conductor devices FAIRCHILD CAMERA & INSTRUMENT CORP 14 March 1975 [18 April 1974] 10762/75 Heading H1K In a method of making an MOS IGFET in a semi-conductor substrate 10, source and drain regions 17, 18 are formed by diffusion from a deposited layer 16a-16c of dopant-containing material, e.g. B 2 O 3 , which is then separated from the substrate by the formation of an insulating region 20. The region 20 may be SiO 2 formed by thermal oxidation of the substrate and of a polysilicon gate electrode 15 and is produced after openings have been etched in the dopant-containing layer 16 over the regions 17, 18. Parts of the thermally-produced layer 20 and of another insulating layer 21 are removed over the source and drain regions 17, 18 for the deposition of contacts 23, e.g. of Al. A connection is also made to the gate electrode 15. The gate insulator 14 is also of SiO 2 .
GB1076275A 1974-04-18 1975-03-14 Method of mosigfet fabrication Expired GB1494569A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46183674A 1974-04-18 1974-04-18

Publications (1)

Publication Number Publication Date
GB1494569A true GB1494569A (en) 1977-12-07

Family

ID=23834119

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1076275A Expired GB1494569A (en) 1974-04-18 1975-03-14 Method of mosigfet fabrication

Country Status (5)

Country Link
JP (1) JPS5543630B2 (en)
CA (1) CA1008564A (en)
DE (1) DE2516291A1 (en)
FR (1) FR2268356B1 (en)
GB (1) GB1494569A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008928A1 (en) * 1978-08-31 1980-03-19 Fujitsu Limited A method of making a semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138974A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacture of insulated gate type field effect transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking
DE1269738B (en) * 1964-10-20 1968-06-06 Telefunken Patent Method for stabilizing semiconductor components
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
US3574010A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Fabrication of metal insulator semiconductor field effect transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008928A1 (en) * 1978-08-31 1980-03-19 Fujitsu Limited A method of making a semiconductor device

Also Published As

Publication number Publication date
JPS50137481A (en) 1975-10-31
JPS5543630B2 (en) 1980-11-07
DE2516291A1 (en) 1975-11-06
FR2268356B1 (en) 1982-05-14
FR2268356A1 (en) 1975-11-14
CA1008564A (en) 1977-04-12

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee