JPS5635481A - Nitrification of molybdenum - Google Patents

Nitrification of molybdenum

Info

Publication number
JPS5635481A
JPS5635481A JP11021979A JP11021979A JPS5635481A JP S5635481 A JPS5635481 A JP S5635481A JP 11021979 A JP11021979 A JP 11021979A JP 11021979 A JP11021979 A JP 11021979A JP S5635481 A JPS5635481 A JP S5635481A
Authority
JP
Japan
Prior art keywords
film
temperature
gas
content
nitriding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11021979A
Other languages
Japanese (ja)
Other versions
JPS6040195B2 (en
Inventor
Nobuo Toyokura
Shinichi Inoue
Hajime Ishikawa
Shinya Hasuo
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54110219A priority Critical patent/JPS6040195B2/en
Publication of JPS5635481A publication Critical patent/JPS5635481A/en
Publication of JPS6040195B2 publication Critical patent/JPS6040195B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To prevent the fall of superconductive transfer temperature by heating an Mo thin film as masked with other material in a mixture gas of H2 and N2 and nitriding the Mo. CONSTITUTION:The Mo thin film 1 and an SiO2 mask 12 are laminated on an SiO2 film 11 on a P type Si substrate 10, and are heat treated, for example, at 500- 800 deg.C for 15-20min in an N2 gas (of 1 atm.) containing 5-10vol% of H2. N2 and H2 adsorbed upon the Mo film react to form NH3 and Mo is nitrified. Further, the H2 removes the adverse affect of the impurities such as H2O or O2 in the gas. According to this method, the N2 content in the formed film can be controlled by the temperature, and the N2 content becomes maximum in the vicinity of the center of the above temperature range. In the range that the N2 content varies, the formed film is a mixture of Mo, MoN and MoN2, but when the ratio (nitriding temperature) is suitably determined, the transition transfer temperature of the superconductivity can be controlled.
JP54110219A 1979-08-31 1979-08-31 Molybdenum nitriding method Expired JPS6040195B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54110219A JPS6040195B2 (en) 1979-08-31 1979-08-31 Molybdenum nitriding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54110219A JPS6040195B2 (en) 1979-08-31 1979-08-31 Molybdenum nitriding method

Publications (2)

Publication Number Publication Date
JPS5635481A true JPS5635481A (en) 1981-04-08
JPS6040195B2 JPS6040195B2 (en) 1985-09-10

Family

ID=14530089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54110219A Expired JPS6040195B2 (en) 1979-08-31 1979-08-31 Molybdenum nitriding method

Country Status (1)

Country Link
JP (1) JPS6040195B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269586A (en) * 1987-04-27 1988-11-07 Fujikura Ltd Manufacture of bridge-type josephson junction device
CN108358178A (en) * 2018-05-03 2018-08-03 中国工程物理研究院流体物理研究所 A kind of Mo2The air atmosphere synthetic method of N

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269586A (en) * 1987-04-27 1988-11-07 Fujikura Ltd Manufacture of bridge-type josephson junction device
CN108358178A (en) * 2018-05-03 2018-08-03 中国工程物理研究院流体物理研究所 A kind of Mo2The air atmosphere synthetic method of N

Also Published As

Publication number Publication date
JPS6040195B2 (en) 1985-09-10

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