JPS57124445A - Semiconductor substrate - Google Patents

Semiconductor substrate

Info

Publication number
JPS57124445A
JPS57124445A JP894881A JP894881A JPS57124445A JP S57124445 A JPS57124445 A JP S57124445A JP 894881 A JP894881 A JP 894881A JP 894881 A JP894881 A JP 894881A JP S57124445 A JPS57124445 A JP S57124445A
Authority
JP
Japan
Prior art keywords
oxygen concentration
defects
semiconductor substrate
substrate
wise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP894881A
Other languages
Japanese (ja)
Inventor
Masayoshi Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP894881A priority Critical patent/JPS57124445A/en
Publication of JPS57124445A publication Critical patent/JPS57124445A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To realize an intrinsic getter ring by a method wherein a thickness- wise regulation of oxygen concentration in a semiconductor substrate results in the elimination of defects near the surfaces and in the creation of defects in the inner region. CONSTITUTION:A substrate 1 is low in oxygen concentration near the upper surface (a) and rear surface (b) and other parts thereof and high in oxygen concentration, with the oxygen concentration regulated thickness-wise. Such a substrate comes to externally contain no defects and to internally contain some after heat treatment at temperatures 600 deg.C-1,100 deg.C, which results in the substantiation of an intrinsic getter ring.
JP894881A 1981-01-26 1981-01-26 Semiconductor substrate Pending JPS57124445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP894881A JPS57124445A (en) 1981-01-26 1981-01-26 Semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP894881A JPS57124445A (en) 1981-01-26 1981-01-26 Semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS57124445A true JPS57124445A (en) 1982-08-03

Family

ID=11706890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP894881A Pending JPS57124445A (en) 1981-01-26 1981-01-26 Semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57124445A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device

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