JPS5522862A - Manufacturing method for silicon oxidized film - Google Patents

Manufacturing method for silicon oxidized film

Info

Publication number
JPS5522862A
JPS5522862A JP9645078A JP9645078A JPS5522862A JP S5522862 A JPS5522862 A JP S5522862A JP 9645078 A JP9645078 A JP 9645078A JP 9645078 A JP9645078 A JP 9645078A JP S5522862 A JPS5522862 A JP S5522862A
Authority
JP
Japan
Prior art keywords
heat treatment
sio2
pressure
atom
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9645078A
Other languages
Japanese (ja)
Other versions
JPS6128213B2 (en
Inventor
Keizo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9645078A priority Critical patent/JPS5522862A/en
Publication of JPS5522862A publication Critical patent/JPS5522862A/en
Publication of JPS6128213B2 publication Critical patent/JPS6128213B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To reduce defect density in SiO2 by a heat treatment of SiO2 in the atmosphere containing O2 of the pressure more than 3 atm. CONSTITUTION:An SiO2 film is formed by a CVD process on a Si substrate, thereafter, being porvided a heat treatment in the O2 atmosphere of 10 atmospheric pressure at 450 deg.C for two hours. By such a processing, an excessive Si atom in the film becomes a value close to a chemical quantity value throuth binding with an O atom. Therefore, a defective density is reduced, a leak current also reduced, and a stable SiO2 film can be obtained. An O2 pressure, temperature of a heat treatment and time can not be determined in a common sense, but the processing would be performed by setting the O2 pressure over 3 atmospheric pressure and the temperature of the heat treatment more than 300 to 800 deg.C in view of influence of the heat to the characteristic or treatment time.
JP9645078A 1978-08-07 1978-08-07 Manufacturing method for silicon oxidized film Granted JPS5522862A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9645078A JPS5522862A (en) 1978-08-07 1978-08-07 Manufacturing method for silicon oxidized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9645078A JPS5522862A (en) 1978-08-07 1978-08-07 Manufacturing method for silicon oxidized film

Publications (2)

Publication Number Publication Date
JPS5522862A true JPS5522862A (en) 1980-02-18
JPS6128213B2 JPS6128213B2 (en) 1986-06-28

Family

ID=14165348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9645078A Granted JPS5522862A (en) 1978-08-07 1978-08-07 Manufacturing method for silicon oxidized film

Country Status (1)

Country Link
JP (1) JPS5522862A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404236A (en) * 1980-10-24 1983-09-13 Kabushiki Kaisha Suwa Seikosha High pressure chemical vapor deposition
JPS59168643A (en) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd Compacting treatment method of oxide film
US4567061A (en) * 1979-10-26 1986-01-28 Agency Of Industrial Science & Technology Method for manufacture of insulating film and interface between insulation film and semiconductor
JPS6181630A (en) * 1984-06-28 1986-04-25 Toshiba Corp Semiconductor device and manufacture thereof
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
US5376591A (en) * 1992-06-05 1994-12-27 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6136728A (en) * 1996-01-05 2000-10-24 Yale University Water vapor annealing process
US6291366B1 (en) * 1994-08-15 2001-09-18 Sony Corporation Process of manufacturing semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830789A (en) * 1971-08-23 1973-04-23
JPS5160453A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Shirikonsankamaku * sio2 * noanteikaho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830789A (en) * 1971-08-23 1973-04-23
JPS5160453A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Shirikonsankamaku * sio2 * noanteikaho

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567061A (en) * 1979-10-26 1986-01-28 Agency Of Industrial Science & Technology Method for manufacture of insulating film and interface between insulation film and semiconductor
US4404236A (en) * 1980-10-24 1983-09-13 Kabushiki Kaisha Suwa Seikosha High pressure chemical vapor deposition
JPS59168643A (en) * 1983-03-15 1984-09-22 Fuji Electric Corp Res & Dev Ltd Compacting treatment method of oxide film
JPS6181630A (en) * 1984-06-28 1986-04-25 Toshiba Corp Semiconductor device and manufacture thereof
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide
US5376591A (en) * 1992-06-05 1994-12-27 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6291366B1 (en) * 1994-08-15 2001-09-18 Sony Corporation Process of manufacturing semiconductor devices
US6458715B2 (en) 1994-08-15 2002-10-01 Sony Corporation Process of manufacturing semiconductor device
US6136728A (en) * 1996-01-05 2000-10-24 Yale University Water vapor annealing process

Also Published As

Publication number Publication date
JPS6128213B2 (en) 1986-06-28

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