JPS6480027A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6480027A
JPS6480027A JP23485687A JP23485687A JPS6480027A JP S6480027 A JPS6480027 A JP S6480027A JP 23485687 A JP23485687 A JP 23485687A JP 23485687 A JP23485687 A JP 23485687A JP S6480027 A JPS6480027 A JP S6480027A
Authority
JP
Japan
Prior art keywords
oxide film
fluoride
layer
window
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23485687A
Other languages
Japanese (ja)
Inventor
Kenji Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23485687A priority Critical patent/JPS6480027A/en
Publication of JPS6480027A publication Critical patent/JPS6480027A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain an oxide film of the same film thickness on the planar surface and the corner parts of the window by performing a heat treatment process at a relatively low temperature after the deposition of a fluoride thin film on a semiconductor substrate. CONSTITUTION:On the side wall which is to be formed into a polycrystalline silicon layer or single crystal layer, a fluoride layer 8 of calcium fluoride or the like is deposited by a vacuum deposition method. After the deposition of the fluoride layer 8, a thermal oxidation process is executed at 600-900 deg.C in an ordinary oxygen atmosphere. Whereupon, an oxide film 9 is formed under the fluoride layer 8. The thickness of the oxide film 9 is formed substantially the same over the whole surface thereof. With this, the oxide film 9 of the same film thickness is obtained on the planar surface and the corner parts of the window.
JP23485687A 1987-09-21 1987-09-21 Manufacture of semiconductor device Pending JPS6480027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23485687A JPS6480027A (en) 1987-09-21 1987-09-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23485687A JPS6480027A (en) 1987-09-21 1987-09-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6480027A true JPS6480027A (en) 1989-03-24

Family

ID=16977421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23485687A Pending JPS6480027A (en) 1987-09-21 1987-09-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6480027A (en)

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