JPS5526664A - Manufacturing semiconductor device - Google Patents

Manufacturing semiconductor device

Info

Publication number
JPS5526664A
JPS5526664A JP9969978A JP9969978A JPS5526664A JP S5526664 A JPS5526664 A JP S5526664A JP 9969978 A JP9969978 A JP 9969978A JP 9969978 A JP9969978 A JP 9969978A JP S5526664 A JPS5526664 A JP S5526664A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
sio
substrate
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9969978A
Other languages
Japanese (ja)
Other versions
JPS6222445B2 (en
Inventor
Keizo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9969978A priority Critical patent/JPS5526664A/en
Publication of JPS5526664A publication Critical patent/JPS5526664A/en
Publication of JPS6222445B2 publication Critical patent/JPS6222445B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain a fine Si3N4 film having a good quality by providing a heat treatment for a SiO2 film grown on a Si substrate in the N2 or NH3 atmosphere at specific pressure and temperature.
CONSTITUTION: A SiO2 film 2 is grown by a vapor phase growth or a thermal oxidization process to form a Si3N4 film 13 on the surface of the film 2 by replacing N2 with O2 through a heat treatment for at 1100 to 1200°C in the N2 or NH3 over three atomspheric pressure at least. According to such a process, if a thickness of the Si3N4 film 13 may be set at 100 to 200Å, the function of a selective mask can be achieved fully, and a curvature, crack and so forth are avoided in the Si substrate 1.
COPYRIGHT: (C)1980,JPO&Japio
JP9969978A 1978-08-15 1978-08-15 Manufacturing semiconductor device Granted JPS5526664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9969978A JPS5526664A (en) 1978-08-15 1978-08-15 Manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9969978A JPS5526664A (en) 1978-08-15 1978-08-15 Manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5526664A true JPS5526664A (en) 1980-02-26
JPS6222445B2 JPS6222445B2 (en) 1987-05-18

Family

ID=14254290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9969978A Granted JPS5526664A (en) 1978-08-15 1978-08-15 Manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5526664A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126270A (en) * 1977-04-11 1978-11-04 Hitachi Ltd Production of semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126270A (en) * 1977-04-11 1978-11-04 Hitachi Ltd Production of semiconductor devices

Also Published As

Publication number Publication date
JPS6222445B2 (en) 1987-05-18

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