JPS6439716A - Vapor growing method - Google Patents

Vapor growing method

Info

Publication number
JPS6439716A
JPS6439716A JP19668087A JP19668087A JPS6439716A JP S6439716 A JPS6439716 A JP S6439716A JP 19668087 A JP19668087 A JP 19668087A JP 19668087 A JP19668087 A JP 19668087A JP S6439716 A JPS6439716 A JP S6439716A
Authority
JP
Japan
Prior art keywords
tube
gas
reaction gas
preheating
grown film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19668087A
Other languages
Japanese (ja)
Inventor
Shuichi Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP19668087A priority Critical patent/JPS6439716A/en
Publication of JPS6439716A publication Critical patent/JPS6439716A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To effectively and thermally decompose a reaction gas, to uniformly introduce the gas from diffusing holes and to form a vapor grown film of high quality by providing a gas preheating tube in a furnace in a core tube of a reduced pressure vapor growing furnace, and preheating the introduced reaction gas. CONSTITUTION:A plurality of gas preheating tube 5 in a furnace provided in a rear manifold 3 is arranged in a core tube 1 sealed by a front manifold and a cap 4, reaction gas is introduced, heated to be thermally decomposed by a heater 7, the gas is uniformly diffused from the diffusing holes 5a of the tube 5, and a semiconductor wafer 8 placed in the tube 1 is covered with a vapor grown film. Thus, since sufficiently and thermally decomposed reaction gas is supplied to the periphery of the wafer 8 in the tube 1, the vapor grown film of high quality can be formed on the wafer 8.
JP19668087A 1987-08-05 1987-08-05 Vapor growing method Pending JPS6439716A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19668087A JPS6439716A (en) 1987-08-05 1987-08-05 Vapor growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19668087A JPS6439716A (en) 1987-08-05 1987-08-05 Vapor growing method

Publications (1)

Publication Number Publication Date
JPS6439716A true JPS6439716A (en) 1989-02-10

Family

ID=16361807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19668087A Pending JPS6439716A (en) 1987-08-05 1987-08-05 Vapor growing method

Country Status (1)

Country Link
JP (1) JPS6439716A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127331A (en) * 1982-01-25 1983-07-29 Kokusai Electric Co Ltd Plasma chemical vapor growth apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127331A (en) * 1982-01-25 1983-07-29 Kokusai Electric Co Ltd Plasma chemical vapor growth apparatus

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