JPS5691486A - Manufacture of photoconductive film - Google Patents
Manufacture of photoconductive filmInfo
- Publication number
- JPS5691486A JPS5691486A JP16811079A JP16811079A JPS5691486A JP S5691486 A JPS5691486 A JP S5691486A JP 16811079 A JP16811079 A JP 16811079A JP 16811079 A JP16811079 A JP 16811079A JP S5691486 A JPS5691486 A JP S5691486A
- Authority
- JP
- Japan
- Prior art keywords
- film
- atmosphere
- cdse
- cdse1
- subjected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 3
- 238000000137 annealing Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 230000008034 disappearance Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To keep the surface of CdSe system film formed by depositing smooth and shorten light carrier disappearance time by subjecting the film to heating treatment and annealing treatment under specific conditions. CONSTITUTION:A CdSe system (CdSe, CdSe1-XSX, CdSe1-XTeX) film is formed on an alumina substrate by depositing and subjected to heating treatment in an inactive atmosphere (e.g. nitrogen gas) and the atmosphere of the mixture of an inactive gas and oxygen gas while kept at 650-670 deg.C. Thereby, the surface of the film is kept smooth. Thereafter, the film is cooled gradually and subjected to annealing treatment at 140-180 deg.C in the atmosphere. Thereby, the responsiveness of the film can be raised.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16811079A JPS5691486A (en) | 1979-12-26 | 1979-12-26 | Manufacture of photoconductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16811079A JPS5691486A (en) | 1979-12-26 | 1979-12-26 | Manufacture of photoconductive film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5691486A true JPS5691486A (en) | 1981-07-24 |
Family
ID=15862029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16811079A Pending JPS5691486A (en) | 1979-12-26 | 1979-12-26 | Manufacture of photoconductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5691486A (en) |
-
1979
- 1979-12-26 JP JP16811079A patent/JPS5691486A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2163000B (en) | Apparatus for forming crystal of semiconductor | |
MY116313A (en) | Method and apparatus for heat-treating an soi substrate and method of preparing an soi substrate by using the same | |
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
JPS5691486A (en) | Manufacture of photoconductive film | |
JPS5249772A (en) | Process for production of semiconductor device | |
JPS5671928A (en) | Treatment for silicon substrate | |
JPS5236468A (en) | Shallow diffusion method | |
JPS5326569A (en) | Layer thickness control me thod of epitaxial growth layer | |
JPS5694750A (en) | Heating treatment device | |
JPS5420671A (en) | Production of semiconductor devices | |
JPS6459807A (en) | Material for thin-film transistor | |
JPS5460858A (en) | Manufacture of gallium arsenide crystal wafer | |
JPS5656648A (en) | Manufacture of semiconductor device | |
JPS5772340A (en) | Quality evaluating method for single crystal silicon wafer | |
JPS51147250A (en) | Treatment method of semiconductor substrate | |
JPS51111056A (en) | Diffused layer forming method | |
JPS5263668A (en) | Production of semiconductor | |
JPS6453419A (en) | Resist coating device | |
JPS51142275A (en) | Method of manufacturing insulating film for semiconductor | |
JPS57117245A (en) | Manufacture of semiconductor substrate | |
FR2377981A1 (en) | Coating continuously moving glass ribbon - preventing warping by heating the undersurface of the ribbon during coating | |
JPS55154730A (en) | Method of diffusing b into si wafer | |
JPS5585667A (en) | Adhering layer forming method | |
JPS5242407A (en) | Method of annealing and its equipment | |
JPS5514883A (en) | Preventing method for oxidation evaporation of platinum group metal material |