JPS5585667A - Adhering layer forming method - Google Patents
Adhering layer forming methodInfo
- Publication number
- JPS5585667A JPS5585667A JP15681478A JP15681478A JPS5585667A JP S5585667 A JPS5585667 A JP S5585667A JP 15681478 A JP15681478 A JP 15681478A JP 15681478 A JP15681478 A JP 15681478A JP S5585667 A JPS5585667 A JP S5585667A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- thin film
- thick
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Magnetic Heads (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form an adhering layer having adhering force between a substrate and a metal film by heat treating a Ti thin film, formed on the substrate, in an inert atmosphere and successively forming other Ti thin film and a magnetic metal film on the above film in the same vacuum state. CONSTITUTION:On a single crystal substrate of rock crystal or sapphire, pref. rock crystal a 500-1000Angstrom thick Ti thin film is formed by vacuum deposition or other method, and it is heat treated at a max. temp. of 800 deg.C to diffuse Ti in the substrate. In case of a rock crystal substrate, H2 gas is used as an atmoshperic gas, and it is important to slowly pass the substrate through the temp. range of 560-590 deg.C in heating and cooling. On the heat treated Ti thin film a 500-1000Angstrom thick Ti thin film and a 3-7mu thick magnetic metal film are formed successively in the same vacuum state. This metal film is a soft magnetic material film for the magnetic core of a magnetic head, and it is pref. a Permalloy film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15681478A JPS5585667A (en) | 1978-12-21 | 1978-12-21 | Adhering layer forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15681478A JPS5585667A (en) | 1978-12-21 | 1978-12-21 | Adhering layer forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585667A true JPS5585667A (en) | 1980-06-27 |
Family
ID=15635904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15681478A Pending JPS5585667A (en) | 1978-12-21 | 1978-12-21 | Adhering layer forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585667A (en) |
-
1978
- 1978-12-21 JP JP15681478A patent/JPS5585667A/en active Pending
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