JPS5753960A - Formation of selective oxide film - Google Patents

Formation of selective oxide film

Info

Publication number
JPS5753960A
JPS5753960A JP12977780A JP12977780A JPS5753960A JP S5753960 A JPS5753960 A JP S5753960A JP 12977780 A JP12977780 A JP 12977780A JP 12977780 A JP12977780 A JP 12977780A JP S5753960 A JPS5753960 A JP S5753960A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
film
nitriding
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12977780A
Other languages
Japanese (ja)
Other versions
JPS6250979B2 (en
Inventor
Kenji Mitsui
Toru Okuma
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP12977780A priority Critical patent/JPS5753960A/en
Publication of JPS5753960A publication Critical patent/JPS5753960A/en
Publication of JPS6250979B2 publication Critical patent/JPS6250979B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the generation of a bird's beak as well as to obtain a high integration by a method wherein an oxide film pattern is provided in a selective oxide region, and after a nitriding film has been selectively formed by heating a substrate in NH3 using the oxide film as a mask, a selective oxidizing treatment is performed. CONSTITUTION:The prescribed pattern, consisting of a thermal oxide film 6 (600Angstrom ) is formed on the substrate 1. Then, the above is heated in the NH3 atmosphere of 1,100 deg.C and the nitriding film 7 (1,300Angstrom in thickness, for example) is formed in such a manner that it is deeper than the oxide film by 200Angstrom or more. Subsequently, an oxidizing treatment is performed in the atmosphere of steam of 1,100 deg.C, for example, and an oxide film 8 of approximately 6,000Angstrom is selectively formed on the substrate through oxide film 6. Through these procedures, as the nitriding film 7 is directly covering the substrate 1 and functioning as an oxidation-resistant mask, the generation of the lateral spreading (bird's beak) on the selective oxide film 7 can be prevented. Besides, the oxide film 6 can be selectively oxidized by removing it after a nitriding treatment has been performed.
JP12977780A 1980-09-16 1980-09-16 Formation of selective oxide film Granted JPS5753960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12977780A JPS5753960A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12977780A JPS5753960A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Publications (2)

Publication Number Publication Date
JPS5753960A true JPS5753960A (en) 1982-03-31
JPS6250979B2 JPS6250979B2 (en) 1987-10-28

Family

ID=15017951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12977780A Granted JPS5753960A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Country Status (1)

Country Link
JP (1) JPS5753960A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112344A (en) * 1984-11-06 1986-05-30 Nippon Denso Co Ltd Formation of semiconductor-element isolation region
US5913148A (en) * 1989-09-08 1999-06-15 Lucent Technologies Inc Reduced size etching method for integrated circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341590U (en) * 1986-09-03 1988-03-18

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923071A (en) * 1972-06-28 1974-03-01
JPS5391666A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923071A (en) * 1972-06-28 1974-03-01
JPS5391666A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Manufacture for semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112344A (en) * 1984-11-06 1986-05-30 Nippon Denso Co Ltd Formation of semiconductor-element isolation region
US5913148A (en) * 1989-09-08 1999-06-15 Lucent Technologies Inc Reduced size etching method for integrated circuits

Also Published As

Publication number Publication date
JPS6250979B2 (en) 1987-10-28

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