JPS5391666A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5391666A JPS5391666A JP595177A JP595177A JPS5391666A JP S5391666 A JPS5391666 A JP S5391666A JP 595177 A JP595177 A JP 595177A JP 595177 A JP595177 A JP 595177A JP S5391666 A JPS5391666 A JP S5391666A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- yhe
- atomosphere
- intrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the intrusion of oxide film under yhe Si3N4, by taking the Si3N4 film as a mask at selective oxidization, which is produced by heating under pressure of 1 kg/cm2 or more for the Si substrate at the atomosphere of N2 or NH3.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP595177A JPS5391666A (en) | 1977-01-24 | 1977-01-24 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP595177A JPS5391666A (en) | 1977-01-24 | 1977-01-24 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5391666A true JPS5391666A (en) | 1978-08-11 |
Family
ID=11625191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP595177A Pending JPS5391666A (en) | 1977-01-24 | 1977-01-24 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5391666A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753960A (en) * | 1980-09-16 | 1982-03-31 | Matsushita Electronics Corp | Formation of selective oxide film |
-
1977
- 1977-01-24 JP JP595177A patent/JPS5391666A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753960A (en) * | 1980-09-16 | 1982-03-31 | Matsushita Electronics Corp | Formation of selective oxide film |
JPS6250979B2 (en) * | 1980-09-16 | 1987-10-28 | Matsushita Electronics Corp |
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