JPS5391666A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5391666A
JPS5391666A JP595177A JP595177A JPS5391666A JP S5391666 A JPS5391666 A JP S5391666A JP 595177 A JP595177 A JP 595177A JP 595177 A JP595177 A JP 595177A JP S5391666 A JPS5391666 A JP S5391666A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
yhe
atomosphere
intrusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP595177A
Other languages
Japanese (ja)
Inventor
Mitsumasa Koyanagi
Shinpei Iijima
Yuji Tanida
Shoichi Mizuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP595177A priority Critical patent/JPS5391666A/en
Publication of JPS5391666A publication Critical patent/JPS5391666A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the intrusion of oxide film under yhe Si3N4, by taking the Si3N4 film as a mask at selective oxidization, which is produced by heating under pressure of 1 kg/cm2 or more for the Si substrate at the atomosphere of N2 or NH3.
COPYRIGHT: (C)1978,JPO&Japio
JP595177A 1977-01-24 1977-01-24 Manufacture for semiconductor device Pending JPS5391666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP595177A JPS5391666A (en) 1977-01-24 1977-01-24 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP595177A JPS5391666A (en) 1977-01-24 1977-01-24 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5391666A true JPS5391666A (en) 1978-08-11

Family

ID=11625191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP595177A Pending JPS5391666A (en) 1977-01-24 1977-01-24 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5391666A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753960A (en) * 1980-09-16 1982-03-31 Matsushita Electronics Corp Formation of selective oxide film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753960A (en) * 1980-09-16 1982-03-31 Matsushita Electronics Corp Formation of selective oxide film
JPS6250979B2 (en) * 1980-09-16 1987-10-28 Matsushita Electronics Corp

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