JPS5753959A - Formation of selective oxide film - Google Patents

Formation of selective oxide film

Info

Publication number
JPS5753959A
JPS5753959A JP12977680A JP12977680A JPS5753959A JP S5753959 A JPS5753959 A JP S5753959A JP 12977680 A JP12977680 A JP 12977680A JP 12977680 A JP12977680 A JP 12977680A JP S5753959 A JPS5753959 A JP S5753959A
Authority
JP
Japan
Prior art keywords
film
polycrystalline
layer
oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12977680A
Other languages
Japanese (ja)
Inventor
Kenji Mitsui
Toru Okuma
Ginjiro Kanbara
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP12977680A priority Critical patent/JPS5753959A/en
Publication of JPS5753959A publication Critical patent/JPS5753959A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To prevent the bird's beak generating in an oxide film isolation layer by a method wherein, after the master pattern consisting of an oxide film and a nitriding film have been formed, a polycrystalline Si layer is deposited and under this state of condition, a selective oxide layer is formed by performing an oxide treatment. CONSTITUTION:The thermal oxide film 6 and the nitriding film 7 are formed on an Si substrate 1 and after an aperture has been provided on the double-layer film on an element isolation region, a polycrystalline Si film 9 of 2,000Angstrom in thickness is formed on the whole surface. Then, the above is heated in the atmosphere of steam of 1,000 deg.C, the polycrystalline Si film is oxidized, and at the same time, an iterelement isolation layer is obtained by forming an oxide film 10 of approximately 6,000Angstrom in thickness on the substrate 1. By the oxidization of the substrate through the polycrystalline Si film 9, the lateral spreading of the oxide layer 10 is suppressed and an isolation layer suitable for a high degree of integration of elements can be obtained. Besides, the polycrystalline Si film 9 is equally effective even when the pattern is formed in such a manner that it is covering the exposed section only of the substrate.
JP12977680A 1980-09-16 1980-09-16 Formation of selective oxide film Pending JPS5753959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12977680A JPS5753959A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12977680A JPS5753959A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Publications (1)

Publication Number Publication Date
JPS5753959A true JPS5753959A (en) 1982-03-31

Family

ID=15017925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12977680A Pending JPS5753959A (en) 1980-09-16 1980-09-16 Formation of selective oxide film

Country Status (1)

Country Link
JP (1) JPS5753959A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968942A (en) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5968942A (en) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp Manufacture of semiconductor device

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