JPS5752141A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS5752141A
JPS5752141A JP12774680A JP12774680A JPS5752141A JP S5752141 A JPS5752141 A JP S5752141A JP 12774680 A JP12774680 A JP 12774680A JP 12774680 A JP12774680 A JP 12774680A JP S5752141 A JPS5752141 A JP S5752141A
Authority
JP
Japan
Prior art keywords
substrate
film
back surface
thin
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12774680A
Other languages
Japanese (ja)
Inventor
Toshiaki Miyajima
Toru Watanabe
Masayoshi Koba
Tatsuo Morita
Atsushi Kudo
Hisatoshi Furubayashi
Hideji Saneyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12774680A priority Critical patent/JPS5752141A/en
Publication of JPS5752141A publication Critical patent/JPS5752141A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To obtain the preferable characteristics of a semiconductor element by epitaxially growing a thin semiconductor film on an insulating substrate and forming a protective film, e.g., an SiO2 film on the back surface of the substrate before heat treating it, thereby preventing the intrusion of substrate forming elements to the thin semiconductor film from vapor phase. CONSTITUTION:After a thin Si film 2 is epitaxially grown on a sapphire insulating substrate 1, an SiO2 film 3 is formed by a CVD method in a thickness of 6,000Angstrom on the back surface of the substrate 1. Thereafter, it is heat treated. In this manner, the substrate forming element, e.g., aluminum or the like is prevented from being exhausted from the back surface of the sapphire substrate in the step of heat treatment.
JP12774680A 1980-09-12 1980-09-12 Manufacture of semiconductor element Pending JPS5752141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12774680A JPS5752141A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12774680A JPS5752141A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5752141A true JPS5752141A (en) 1982-03-27

Family

ID=14967657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12774680A Pending JPS5752141A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS5752141A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169462A (en) * 1982-03-30 1983-10-05 アイシン精機株式会社 Artificial heart drive apparatus
JPS6131346A (en) * 1984-07-18 1986-02-13 ハリマセラミック株式会社 Nozzle for casting
JPH03145718A (en) * 1989-10-31 1991-06-20 Matsushita Electric Ind Co Ltd Vapor epitaxial growth method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145267A (en) * 1975-06-09 1976-12-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51145267A (en) * 1975-06-09 1976-12-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169462A (en) * 1982-03-30 1983-10-05 アイシン精機株式会社 Artificial heart drive apparatus
JPS6131346A (en) * 1984-07-18 1986-02-13 ハリマセラミック株式会社 Nozzle for casting
JPH03145718A (en) * 1989-10-31 1991-06-20 Matsushita Electric Ind Co Ltd Vapor epitaxial growth method

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