JPS6411316A - Formation of soi structure - Google Patents
Formation of soi structureInfo
- Publication number
- JPS6411316A JPS6411316A JP16729287A JP16729287A JPS6411316A JP S6411316 A JPS6411316 A JP S6411316A JP 16729287 A JP16729287 A JP 16729287A JP 16729287 A JP16729287 A JP 16729287A JP S6411316 A JPS6411316 A JP S6411316A
- Authority
- JP
- Japan
- Prior art keywords
- film
- al2o3
- mgo
- layer
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To suppress leakage current upon the forming of a transistor element (MOSFET), by performing a high-temperature annealing process to form a high-resistance layer on an interface of a single-crystal Si film which is formed on an Al2O3 layer or a MgO/Al2O3 layer by epitaxial growth. CONSTITUTION:A single-crystalline Si film 3 of about 500nm in thickness is formed at 950 deg.C of growth temperature is formed on a MgO/Al2O3 film 2 by a vapor phase epitaxial growth method in which heat decomposition of a silane (SiH4) gas is performed. This substrate is provided with a lamp annealing process at 1200 deg.C or above and for about 10 seconds in a nitrogen atmosphere by lamp heating, so that a high-resistance layer 4 is formed on an interface between the MgO-Al2O3 film 2 and the single-crystal Si film 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16729287A JPS6411316A (en) | 1987-07-03 | 1987-07-03 | Formation of soi structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16729287A JPS6411316A (en) | 1987-07-03 | 1987-07-03 | Formation of soi structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411316A true JPS6411316A (en) | 1989-01-13 |
Family
ID=15847050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16729287A Pending JPS6411316A (en) | 1987-07-03 | 1987-07-03 | Formation of soi structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411316A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1037272A1 (en) * | 1997-06-19 | 2000-09-20 | Asahi Kasei Kogyo Kabushiki Kaisha | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| US6676748B1 (en) | 1999-11-17 | 2004-01-13 | Denso Corporation | Method for manufacturing semiconductor substrate |
| JP2008045515A (en) * | 2006-08-18 | 2008-02-28 | Honda Motor Co Ltd | Catalyst holding structure for exhaust system |
| DE112010001631T5 (en) | 2009-04-15 | 2012-06-21 | Toyota Jidosha Kabushiki Kaisha | The fuel cell system |
| CN110785856A (en) * | 2017-06-23 | 2020-02-11 | 信越化学工业株式会社 | Method for manufacturing high-efficiency solar cell |
-
1987
- 1987-07-03 JP JP16729287A patent/JPS6411316A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1037272A1 (en) * | 1997-06-19 | 2000-09-20 | Asahi Kasei Kogyo Kabushiki Kaisha | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| US6528387B1 (en) | 1997-06-19 | 2003-03-04 | Asahi Kasei Kabushiki Kaisha | SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| EP1037272A4 (en) * | 1997-06-19 | 2004-07-28 | Asahi Chemical Ind | Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same |
| US6676748B1 (en) | 1999-11-17 | 2004-01-13 | Denso Corporation | Method for manufacturing semiconductor substrate |
| JP2008045515A (en) * | 2006-08-18 | 2008-02-28 | Honda Motor Co Ltd | Catalyst holding structure for exhaust system |
| DE112010001631T5 (en) | 2009-04-15 | 2012-06-21 | Toyota Jidosha Kabushiki Kaisha | The fuel cell system |
| CN110785856A (en) * | 2017-06-23 | 2020-02-11 | 信越化学工业株式会社 | Method for manufacturing high-efficiency solar cell |
| CN110785856B (en) * | 2017-06-23 | 2022-09-27 | 信越化学工业株式会社 | Method for manufacturing high-efficiency solar cell |
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