JPS6449214A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6449214A JPS6449214A JP20524087A JP20524087A JPS6449214A JP S6449214 A JPS6449214 A JP S6449214A JP 20524087 A JP20524087 A JP 20524087A JP 20524087 A JP20524087 A JP 20524087A JP S6449214 A JPS6449214 A JP S6449214A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- single crystalline
- amorphous silicon
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a single crystalline silicon having preferable quality by chemically vapor growing high order silane gas at 620 deg.C or less to form an amorphous silicon film, then heat treating the silicon film to crystallize it. CONSTITUTION:A high order silane gas 11 is chemically vapor grown at 620 deg.C or less to form an amorphous silicon film 12. The film 12 is heat-treated at a high temperature to form a single crystalline silicon. Then, a part not covered with an SiO2 film 14 is single crystallized to form a single crystalline silicon 15. Since the silicon 15 formed here obtains no exfoliations of the film and no deterioration of the film with hydrogen since the amorphous silicon before annealing contains low hydrogen concentration. Thus, the silicon 15 of good film quality is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20524087A JPS6449214A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20524087A JPS6449214A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6449214A true JPS6449214A (en) | 1989-02-23 |
Family
ID=16503719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20524087A Pending JPS6449214A (en) | 1987-08-20 | 1987-08-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6449214A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0216720A (en) * | 1988-07-04 | 1990-01-19 | Sanyo Electric Co Ltd | Solid phase epitaxy method |
-
1987
- 1987-08-20 JP JP20524087A patent/JPS6449214A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0216720A (en) * | 1988-07-04 | 1990-01-19 | Sanyo Electric Co Ltd | Solid phase epitaxy method |
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