JPS6449214A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6449214A
JPS6449214A JP20524087A JP20524087A JPS6449214A JP S6449214 A JPS6449214 A JP S6449214A JP 20524087 A JP20524087 A JP 20524087A JP 20524087 A JP20524087 A JP 20524087A JP S6449214 A JPS6449214 A JP S6449214A
Authority
JP
Japan
Prior art keywords
film
silicon
single crystalline
amorphous silicon
crystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20524087A
Other languages
Japanese (ja)
Inventor
Fumitake Mieno
Atsuhiro Tsukune
Masahide Nishimura
Tsutomu Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20524087A priority Critical patent/JPS6449214A/en
Publication of JPS6449214A publication Critical patent/JPS6449214A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a single crystalline silicon having preferable quality by chemically vapor growing high order silane gas at 620 deg.C or less to form an amorphous silicon film, then heat treating the silicon film to crystallize it. CONSTITUTION:A high order silane gas 11 is chemically vapor grown at 620 deg.C or less to form an amorphous silicon film 12. The film 12 is heat-treated at a high temperature to form a single crystalline silicon. Then, a part not covered with an SiO2 film 14 is single crystallized to form a single crystalline silicon 15. Since the silicon 15 formed here obtains no exfoliations of the film and no deterioration of the film with hydrogen since the amorphous silicon before annealing contains low hydrogen concentration. Thus, the silicon 15 of good film quality is obtained.
JP20524087A 1987-08-20 1987-08-20 Manufacture of semiconductor device Pending JPS6449214A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20524087A JPS6449214A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20524087A JPS6449214A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6449214A true JPS6449214A (en) 1989-02-23

Family

ID=16503719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20524087A Pending JPS6449214A (en) 1987-08-20 1987-08-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6449214A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216720A (en) * 1988-07-04 1990-01-19 Sanyo Electric Co Ltd Solid phase epitaxy method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216720A (en) * 1988-07-04 1990-01-19 Sanyo Electric Co Ltd Solid phase epitaxy method

Similar Documents

Publication Publication Date Title
JPS6432622A (en) Formation of soi film
EP0390672A3 (en) Method for heat process of silicon
US4204893A (en) Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source
JPS6449214A (en) Manufacture of semiconductor device
JPH0729823A (en) Fabrication of semiconductor device
JPS5659694A (en) Manufacture of thin film
JPS571225A (en) Manufacture of semiconductor device
JPS58182816A (en) Recrystallizing method of silicon family semiconductor material
JPS6411316A (en) Formation of soi structure
JPS5737827A (en) Manufacture of semiconductor device
US3563816A (en) Method for the vapor growth of semiconductors
JPH0557239B2 (en)
JPS6411369A (en) Manufacture of polycrystalline silicon thin film transistor
JPS57115823A (en) Manufacture of amorphous semiconductor film
JPS61256732A (en) Method for selective epitaxial growth
JPS57211737A (en) Manufacture of semiconductor substrate
JPS61127119A (en) Method of growing silicon crystal
JPS57159017A (en) Manufacture of semiconductor single crystal film
JPS61191016A (en) Manufacture of semiconductor substrate
JP2706967B2 (en) Method of forming single crystal magnesia spinel film
JPS6427221A (en) Manufacture of laminated type semiconductor device
JP2737990B2 (en) Compound semiconductor single crystal manufacturing equipment
JPS6489511A (en) Manufacture of single crystal silicon film
JPS6341210B2 (en)
JPS6439765A (en) Manufacture of semiconductor device