JPS6427221A - Manufacture of laminated type semiconductor device - Google Patents
Manufacture of laminated type semiconductor deviceInfo
- Publication number
- JPS6427221A JPS6427221A JP18214287A JP18214287A JPS6427221A JP S6427221 A JPS6427221 A JP S6427221A JP 18214287 A JP18214287 A JP 18214287A JP 18214287 A JP18214287 A JP 18214287A JP S6427221 A JPS6427221 A JP S6427221A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystalline
- substrate
- epitaxial growth
- lateral epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To perform a preferably lateral epitaxial growth by reducing the area of an opening formed at part of an insulating layer smaller than 9mum<2>. CONSTITUTION:A polycrystalline silicon 79 for forming a third layer transistor is irradiated with laser light to be converted to a single crystal. Since a polycrystalline silicon 64 having 9mum<2> of less of area is buried into an opening 52, impurities of first and second layer MOS transistors A, B are not diffused and characteristics are not hence deteriorated. The silicon 79 is connected through a single crystalline silicon 75 and epitaxially grown silicon 61 to a single crystalline silicon substrate 11. Thus, solidification and recrystallization occur from the single crystalline silicon of the silicon 75, the silicon 61 and the substrate 11, the silicon 79 can be always formed to be single crystalline silicon having the same crystal axis as that of the substrate 11 by a lateral epitaxial growth, thereby facilitating a lateral epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18214287A JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18214287A JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6427221A true JPS6427221A (en) | 1989-01-30 |
| JPH0573324B2 JPH0573324B2 (en) | 1993-10-14 |
Family
ID=16113085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18214287A Granted JPS6427221A (en) | 1987-07-23 | 1987-07-23 | Manufacture of laminated type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427221A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005333136A (en) * | 2004-05-17 | 2005-12-02 | Samsung Electronics Co Ltd | Semiconductor device having field-effect transistor and its manufacturing method |
| JP2006080486A (en) * | 2004-09-08 | 2006-03-23 | Samsung Electronics Co Ltd | Forming method of epitaxial film, thin film forming method using the same and manufacturing method of semiconductor device |
-
1987
- 1987-07-23 JP JP18214287A patent/JPS6427221A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005333136A (en) * | 2004-05-17 | 2005-12-02 | Samsung Electronics Co Ltd | Semiconductor device having field-effect transistor and its manufacturing method |
| JP2006080486A (en) * | 2004-09-08 | 2006-03-23 | Samsung Electronics Co Ltd | Forming method of epitaxial film, thin film forming method using the same and manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0573324B2 (en) | 1993-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |