TW429553B - Nitride semiconductor device and a method of growing nitride semiconductor crystal - Google Patents
Nitride semiconductor device and a method of growing nitride semiconductor crystalInfo
- Publication number
- TW429553B TW429553B TW088119726A TW88119726A TW429553B TW 429553 B TW429553 B TW 429553B TW 088119726 A TW088119726 A TW 088119726A TW 88119726 A TW88119726 A TW 88119726A TW 429553 B TW429553 B TW 429553B
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- semiconductor device
- growing
- based compound
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
This nitride semiconductor device includes a BN based compound buffer layer between a substrate and a nitride crystalline layer. The buffer layer causes the high crystallization of the crystalline layer by preventing the mismatch of the lattice. By the small difference between a BN and sapphire, the difference of the lattice constant between the BN based compound and a sapphire substrate is also small. As result, the BN based compound between the substrate and the nitride crystalline layer is able to prevent the mismatch of the lattice.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980057119A KR20000041281A (en) | 1998-12-22 | 1998-12-22 | Nitride system semiconductor device and method for growing semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
TW429553B true TW429553B (en) | 2001-04-11 |
Family
ID=19564520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088119726A TW429553B (en) | 1998-12-22 | 1999-11-11 | Nitride semiconductor device and a method of growing nitride semiconductor crystal |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000188260A (en) |
KR (1) | KR20000041281A (en) |
TW (1) | TW429553B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100684928B1 (en) * | 2000-07-07 | 2007-02-20 | 학교법인연세대학교 | Compound semiconductor device including diffusion blocking layer of network structure and Method of manufacturing the same |
JP2004247412A (en) * | 2003-02-12 | 2004-09-02 | Yamaha Corp | Semiconductor multilayer structure, its fabricating method, and semiconductor device having that structure |
KR100448352B1 (en) | 2003-11-28 | 2004-09-10 | 삼성전기주식회사 | Method for fabricating GaN-based nitride layer |
JP2005210084A (en) * | 2003-12-22 | 2005-08-04 | Ngk Insulators Ltd | Epitaxial substrate, semiconductor laminate structure, dislocation reduction method, and substrate for epitaxial formation |
JP4535935B2 (en) * | 2005-05-19 | 2010-09-01 | 日本電信電話株式会社 | Nitride semiconductor thin film and manufacturing method thereof |
KR100713031B1 (en) * | 2005-12-30 | 2007-05-02 | 서울옵토디바이스주식회사 | Gallium nitride-based compound semiconductor |
JP5249721B2 (en) * | 2008-11-06 | 2013-07-31 | 浜松ホトニクス株式会社 | Silicon light emitting device |
CN103733308B (en) * | 2011-09-05 | 2016-08-17 | 日本电信电话株式会社 | Nitride semiconductor structure with and preparation method thereof |
JP6909191B2 (en) * | 2018-09-27 | 2021-07-28 | 信越化学工業株式会社 | Laminates, semiconductor devices and methods for manufacturing laminates |
US20220285578A1 (en) * | 2021-03-08 | 2022-09-08 | Samsung Electronics Co., Ltd. | Light-emitting diode and display device including the same |
CN113628954A (en) * | 2021-06-17 | 2021-11-09 | 中国电子科技集团公司第十三研究所 | Preparation method of GaN-based material on SiC substrate and semiconductor device |
-
1998
- 1998-12-22 KR KR1019980057119A patent/KR20000041281A/en not_active Application Discontinuation
-
1999
- 1999-11-11 TW TW088119726A patent/TW429553B/en not_active IP Right Cessation
- 1999-11-22 JP JP33203099A patent/JP2000188260A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20000041281A (en) | 2000-07-15 |
JP2000188260A (en) | 2000-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |