JPS56130470A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
JPS56130470A
JPS56130470A JP3155980A JP3155980A JPS56130470A JP S56130470 A JPS56130470 A JP S56130470A JP 3155980 A JP3155980 A JP 3155980A JP 3155980 A JP3155980 A JP 3155980A JP S56130470 A JPS56130470 A JP S56130470A
Authority
JP
Japan
Prior art keywords
carrier gas
gas introduction
sputtering
reproducibility
bell jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3155980A
Other languages
Japanese (ja)
Inventor
Takaaki Kumochi
Yukio Obara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3155980A priority Critical patent/JPS56130470A/en
Publication of JPS56130470A publication Critical patent/JPS56130470A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Abstract

PURPOSE:To improve the thickness uniformity of films and the reproducibility of the film characteristics by forming at least two carrier gas introduction holes for introducing the gas into an airtight space per kind of carrier gas. CONSTITUTION:Carrier gas introduction hole 17' having the same structure as carrier gas introduction hole 17 is formed in the side of bell jar 2 of the sputtering apparatus opposite to hole 17. After evacuating bell jar 1, 2, main valve 19 is opened within the exhaust capacity of an exhaust system, and gaseous Ar or the like is introduced from holes 17, 17' to form a sputtering atmosphere. Sputtering is then carried out. The uniformity in thickness of thin films formed on glass plates of substrates 5 is about 7% in a maximum to minimum thickness ratio on the same circumference of glass substrates 5, and the reproducibility of the film characteritics is improved.
JP3155980A 1980-03-14 1980-03-14 Sputtering apparatus Pending JPS56130470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3155980A JPS56130470A (en) 1980-03-14 1980-03-14 Sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3155980A JPS56130470A (en) 1980-03-14 1980-03-14 Sputtering apparatus

Publications (1)

Publication Number Publication Date
JPS56130470A true JPS56130470A (en) 1981-10-13

Family

ID=12334526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3155980A Pending JPS56130470A (en) 1980-03-14 1980-03-14 Sputtering apparatus

Country Status (1)

Country Link
JP (1) JPS56130470A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100855U (en) * 1982-12-24 1984-07-07 株式会社島津製作所 Continuous sputtering device
US6599401B1 (en) * 2000-03-17 2003-07-29 University Of New Orleans Research And Technology Foundation, Inc. In-plane anisotropic tri-layered magnetic sandwich structure with large magnetoresistance effect

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420975A (en) * 1977-07-19 1979-02-16 Fujitsu Ltd Sputtering device
JPS54150790A (en) * 1978-05-16 1979-11-27 Identoflex Ag Abrasives produced by burying polishing grain into binding material
JPS5581115A (en) * 1978-12-14 1980-06-18 Nippon Ester Co Ltd Delivery of molten polymer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420975A (en) * 1977-07-19 1979-02-16 Fujitsu Ltd Sputtering device
JPS54150790A (en) * 1978-05-16 1979-11-27 Identoflex Ag Abrasives produced by burying polishing grain into binding material
JPS5581115A (en) * 1978-12-14 1980-06-18 Nippon Ester Co Ltd Delivery of molten polymer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59100855U (en) * 1982-12-24 1984-07-07 株式会社島津製作所 Continuous sputtering device
JPS6321573Y2 (en) * 1982-12-24 1988-06-14
US6599401B1 (en) * 2000-03-17 2003-07-29 University Of New Orleans Research And Technology Foundation, Inc. In-plane anisotropic tri-layered magnetic sandwich structure with large magnetoresistance effect

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