JPS6411973A - In-line type film forming device - Google Patents

In-line type film forming device

Info

Publication number
JPS6411973A
JPS6411973A JP16391487A JP16391487A JPS6411973A JP S6411973 A JPS6411973 A JP S6411973A JP 16391487 A JP16391487 A JP 16391487A JP 16391487 A JP16391487 A JP 16391487A JP S6411973 A JPS6411973 A JP S6411973A
Authority
JP
Japan
Prior art keywords
chamber
film forming
degasification
treated
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16391487A
Other languages
Japanese (ja)
Other versions
JPH0641630B2 (en
Inventor
Hidenori Suwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP62163914A priority Critical patent/JPH0641630B2/en
Publication of JPS6411973A publication Critical patent/JPS6411973A/en
Publication of JPH0641630B2 publication Critical patent/JPH0641630B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To improve the efficiency of the title device in the formation of a thin film and to uniformize the quality of the film by providing the degasification chamber and isolation chamber capable of stocking plural materials to be treated between the charging chamber and film forming chamber in the in-line type film forming device. CONSTITUTION:The in-line type film forming device capable of forming a thin film on the surface of a substrate in its vacuum chamber by sputtering, etc., is composed of the charging chamber 2, the degasification chamber 6, the isolation chamber 8, a vacuum film forming chamber 10, and a discharge chamber 13. The substrate 1 to be treated is placed in the charging chamber 2 which is then closed and evacuated to remove the gases inherent in the material of plastics, etc., to be treated, then plural materials 1 to be treated are stocked in the stocker carriages 14 in the degasification chamber 6, and the absorbed gas is removed. The carriages are successively introduced in the degasification chamber 6 one by one, sent into the isolation chamber 8, and introduced into the film forming chamber 10 without entraining the gas separated in the degasification chamber 6. A film is formed in the chamber 10 by the vacuum deposition by a sputtering cathode 11, and discharged into the atmosphere at atmospheric pressure in the discharge chamber 13. Since the substrate 1 is degasified in the degasification chamber 6 for relatively long and specified time, a homogeneous then film can be efficiently formed on the whole surface of the material to be treated.
JP62163914A 1987-07-02 1987-07-02 Substrate transport method for in-line type film deposition equipment Expired - Fee Related JPH0641630B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163914A JPH0641630B2 (en) 1987-07-02 1987-07-02 Substrate transport method for in-line type film deposition equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163914A JPH0641630B2 (en) 1987-07-02 1987-07-02 Substrate transport method for in-line type film deposition equipment

Publications (2)

Publication Number Publication Date
JPS6411973A true JPS6411973A (en) 1989-01-17
JPH0641630B2 JPH0641630B2 (en) 1994-06-01

Family

ID=15783225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163914A Expired - Fee Related JPH0641630B2 (en) 1987-07-02 1987-07-02 Substrate transport method for in-line type film deposition equipment

Country Status (1)

Country Link
JP (1) JPH0641630B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030037240A (en) * 2003-03-27 2003-05-12 (주) 월드비젼 Continuously evaporation process and machine to be used EMI shield thin film application
CN107868942A (en) * 2016-09-27 2018-04-03 北京北方华创微电子装备有限公司 One kind goes to gas chamber and its removes gas method and semiconductor processing equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609102A (en) * 1983-06-28 1985-01-18 松下電器産業株式会社 Voltage depending nonlinear resistor porcelain composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609102A (en) * 1983-06-28 1985-01-18 松下電器産業株式会社 Voltage depending nonlinear resistor porcelain composition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030037240A (en) * 2003-03-27 2003-05-12 (주) 월드비젼 Continuously evaporation process and machine to be used EMI shield thin film application
CN107868942A (en) * 2016-09-27 2018-04-03 北京北方华创微电子装备有限公司 One kind goes to gas chamber and its removes gas method and semiconductor processing equipment
WO2018058898A1 (en) * 2016-09-27 2018-04-05 北京北方华创微电子装备有限公司 Degassing method, degassing chamber and semiconductor processing equipment
CN107868942B (en) * 2016-09-27 2019-11-29 北京北方华创微电子装备有限公司 One kind going to gas chamber and its removes gas method and semiconductor processing equipment

Also Published As

Publication number Publication date
JPH0641630B2 (en) 1994-06-01

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