JPS6411973A - In-line type film forming device - Google Patents
In-line type film forming deviceInfo
- Publication number
- JPS6411973A JPS6411973A JP16391487A JP16391487A JPS6411973A JP S6411973 A JPS6411973 A JP S6411973A JP 16391487 A JP16391487 A JP 16391487A JP 16391487 A JP16391487 A JP 16391487A JP S6411973 A JPS6411973 A JP S6411973A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- film forming
- degasification
- treated
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To improve the efficiency of the title device in the formation of a thin film and to uniformize the quality of the film by providing the degasification chamber and isolation chamber capable of stocking plural materials to be treated between the charging chamber and film forming chamber in the in-line type film forming device. CONSTITUTION:The in-line type film forming device capable of forming a thin film on the surface of a substrate in its vacuum chamber by sputtering, etc., is composed of the charging chamber 2, the degasification chamber 6, the isolation chamber 8, a vacuum film forming chamber 10, and a discharge chamber 13. The substrate 1 to be treated is placed in the charging chamber 2 which is then closed and evacuated to remove the gases inherent in the material of plastics, etc., to be treated, then plural materials 1 to be treated are stocked in the stocker carriages 14 in the degasification chamber 6, and the absorbed gas is removed. The carriages are successively introduced in the degasification chamber 6 one by one, sent into the isolation chamber 8, and introduced into the film forming chamber 10 without entraining the gas separated in the degasification chamber 6. A film is formed in the chamber 10 by the vacuum deposition by a sputtering cathode 11, and discharged into the atmosphere at atmospheric pressure in the discharge chamber 13. Since the substrate 1 is degasified in the degasification chamber 6 for relatively long and specified time, a homogeneous then film can be efficiently formed on the whole surface of the material to be treated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62163914A JPH0641630B2 (en) | 1987-07-02 | 1987-07-02 | Substrate transport method for in-line type film deposition equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62163914A JPH0641630B2 (en) | 1987-07-02 | 1987-07-02 | Substrate transport method for in-line type film deposition equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6411973A true JPS6411973A (en) | 1989-01-17 |
JPH0641630B2 JPH0641630B2 (en) | 1994-06-01 |
Family
ID=15783225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62163914A Expired - Fee Related JPH0641630B2 (en) | 1987-07-02 | 1987-07-02 | Substrate transport method for in-line type film deposition equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0641630B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030037240A (en) * | 2003-03-27 | 2003-05-12 | (주) 월드비젼 | Continuously evaporation process and machine to be used EMI shield thin film application |
CN107868942A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | One kind goes to gas chamber and its removes gas method and semiconductor processing equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS609102A (en) * | 1983-06-28 | 1985-01-18 | 松下電器産業株式会社 | Voltage depending nonlinear resistor porcelain composition |
-
1987
- 1987-07-02 JP JP62163914A patent/JPH0641630B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS609102A (en) * | 1983-06-28 | 1985-01-18 | 松下電器産業株式会社 | Voltage depending nonlinear resistor porcelain composition |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030037240A (en) * | 2003-03-27 | 2003-05-12 | (주) 월드비젼 | Continuously evaporation process and machine to be used EMI shield thin film application |
CN107868942A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | One kind goes to gas chamber and its removes gas method and semiconductor processing equipment |
WO2018058898A1 (en) * | 2016-09-27 | 2018-04-05 | 北京北方华创微电子装备有限公司 | Degassing method, degassing chamber and semiconductor processing equipment |
CN107868942B (en) * | 2016-09-27 | 2019-11-29 | 北京北方华创微电子装备有限公司 | One kind going to gas chamber and its removes gas method and semiconductor processing equipment |
Also Published As
Publication number | Publication date |
---|---|
JPH0641630B2 (en) | 1994-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |