JPS5794338A - Vapor deposition device - Google Patents

Vapor deposition device

Info

Publication number
JPS5794338A
JPS5794338A JP17030480A JP17030480A JPS5794338A JP S5794338 A JPS5794338 A JP S5794338A JP 17030480 A JP17030480 A JP 17030480A JP 17030480 A JP17030480 A JP 17030480A JP S5794338 A JPS5794338 A JP S5794338A
Authority
JP
Japan
Prior art keywords
vapor deposition
chamber
communicates
cooling chamber
ion cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17030480A
Other languages
Japanese (ja)
Other versions
JPS6411334B2 (en
Inventor
Yoshinobu Taguchi
Akio Sasaki
Minoru Kametani
Kunio Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP17030480A priority Critical patent/JPS5794338A/en
Publication of JPS5794338A publication Critical patent/JPS5794338A/en
Publication of JPS6411334B2 publication Critical patent/JPS6411334B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To improve efficiency of vapor deposition by providing an ion cleaning chamber and a preliminary vacuum chamber in the front stage of a vapor deposition chamber and providing the first cooling chamber and second cooling chamber in the rear stage.
CONSTITUTION: In the front stage of a vapor deposition chamber 5 of a vapor deposition device that makes vapor deposition on a substrate 1, an ion cleaning chamber 3 that cleans the substrate and a preliminary vacuum chamber 4 which communicates with the ion cleaning chamber 3 are provided, and the first cooling chamber 6 that communicates with the vapor deposition chamber 5 and the second cooling chamber 7 that communicates with the first cooling chamber 6 are provided in the rear stage. Thus, continuous vapor deposition is made possible by sending substrates successively in the vapor deposition chamber 5 to improve efficiency of vapor depositing operation.
COPYRIGHT: (C)1982,JPO&Japio
JP17030480A 1980-12-04 1980-12-04 Vapor deposition device Granted JPS5794338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17030480A JPS5794338A (en) 1980-12-04 1980-12-04 Vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17030480A JPS5794338A (en) 1980-12-04 1980-12-04 Vapor deposition device

Publications (2)

Publication Number Publication Date
JPS5794338A true JPS5794338A (en) 1982-06-11
JPS6411334B2 JPS6411334B2 (en) 1989-02-23

Family

ID=15902479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17030480A Granted JPS5794338A (en) 1980-12-04 1980-12-04 Vapor deposition device

Country Status (1)

Country Link
JP (1) JPS5794338A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082280A (en) * 1983-10-05 1985-05-10 Hitachi Ltd Joining device for clean surface
JPS6147069U (en) * 1984-08-25 1986-03-29 株式会社島津製作所 Processing material transfer device
JPS6194558U (en) * 1984-11-28 1986-06-18
US11116379B2 (en) 2016-08-04 2021-09-14 Lg Electronics Inc. Dishwasher

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511083A (en) * 1978-04-07 1980-01-25 Varian Associates Spatter coating system and vacuum vale* transporter and spatter source arranging device for said system
JPS55116432A (en) * 1979-03-02 1980-09-08 Anelva Corp Vacuum apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511083A (en) * 1978-04-07 1980-01-25 Varian Associates Spatter coating system and vacuum vale* transporter and spatter source arranging device for said system
JPS55116432A (en) * 1979-03-02 1980-09-08 Anelva Corp Vacuum apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082280A (en) * 1983-10-05 1985-05-10 Hitachi Ltd Joining device for clean surface
JPS6147069U (en) * 1984-08-25 1986-03-29 株式会社島津製作所 Processing material transfer device
JPS6194558U (en) * 1984-11-28 1986-06-18
US11116379B2 (en) 2016-08-04 2021-09-14 Lg Electronics Inc. Dishwasher

Also Published As

Publication number Publication date
JPS6411334B2 (en) 1989-02-23

Similar Documents

Publication Publication Date Title
EP0392134A3 (en) Process for treatment of backside of semiconductor wafer
TW342515B (en) Process for making a field emitter cathode using a particulate field emitter material
EP0214515A3 (en) Method and apparatus for forming metal silicide
JPS5754269A (en) Apparatus for forming film in vacuum
JPS56133884A (en) Manufacture of photoelectric transducer
JPS5794338A (en) Vapor deposition device
EP0095384A3 (en) Vacuum deposition apparatus
JPS56137683A (en) Solar cell
JPS544061A (en) Test piece chamber for electronic microscope or the like
JPS5521553A (en) Device for fabricating film
JPS53147549A (en) Forming method of antireflection film
JPS53110378A (en) Plasma carrying device
JPS5281701A (en) Single suction multiple stage centrifugal pump
JPS571140A (en) Plate take-out apparatus
JPS5310974A (en) Etching method of oxide film
JPS6473074A (en) Sputtering device
JPS5591971A (en) Thin film forming method
JPS5384563A (en) Thin film pattern forming method
JPS56105475A (en) Coating apparatus and method of substrate by cathode spattering and use
JPS5267515A (en) Face plate manufacturing method
JPS545386A (en) Surface processor for wafer
JPS5421278A (en) Plasma etching method
JPS5329075A (en) Plasma treating apparatus of semiconductor substrates
JPS51112355A (en) Reflection prevented lens
JPS5433667A (en) Forming method for semiconductor surface protection film