JPS6321573Y2 - - Google Patents
Info
- Publication number
- JPS6321573Y2 JPS6321573Y2 JP1982196639U JP19663982U JPS6321573Y2 JP S6321573 Y2 JPS6321573 Y2 JP S6321573Y2 JP 1982196639 U JP1982196639 U JP 1982196639U JP 19663982 U JP19663982 U JP 19663982U JP S6321573 Y2 JPS6321573 Y2 JP S6321573Y2
- Authority
- JP
- Japan
- Prior art keywords
- pipe system
- chamber
- sputtering
- gas introduction
- main gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 239000007789 gas Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【考案の詳細な説明】 本考案は連続スパツタ装置の改良に関する。[Detailed explanation of the idea] The present invention relates to improvements in continuous sputtering equipment.
従来の、入口室、スパツタ室、出口室を有する
連続スパツタ装置では、スパツタ室を一度高真空
まで排気してから所定のオリフイス弁でアルゴン
ガスを導入している。しかしながら、通常オリフ
イス弁のガス流量はスパツタ圧力（例えば２×
10-2Torr）において真空排気装置側の流量調整
弁の排気速度に合わせて調整してあるため、スパ
ツタ室に急速に前記アルゴンガスを充填させるこ
とができない。特に連続式にあつてはタクトが短
いため、短時間でスパツタ室の圧力を一定にしな
ければならないにも拘らず、時間がかかり、良好
なスパツタ作用が阻害される。これを防ぐため、
自動制御方式が採用されているがコスト高になる
等の欠点があつた。 In a conventional continuous sputtering apparatus having an inlet chamber, a sputtering chamber, and an outlet chamber, the sputtering chamber is once evacuated to a high vacuum and then argon gas is introduced through a predetermined orifice valve. However, the gas flow rate of the orifice valve is usually limited to the sputter pressure (e.g. 2×
10 -2 Torr), the sputtering chamber cannot be rapidly filled with the argon gas because it is adjusted in accordance with the exhaust speed of the flow control valve on the evacuation device side. Particularly in the case of a continuous type, since the tact is short, even though the pressure in the sputtering chamber must be kept constant in a short period of time, it takes time and good sputtering action is hindered. To prevent this,
Although an automatic control system has been adopted, it has drawbacks such as high cost.
本考案は上記欠点を除きスパツタ室に急速にガ
ス導入ができるような連続スパツタ装置を安価に
提供することを目的とする。 The object of the present invention is to eliminate the above-mentioned drawbacks and provide an inexpensive continuous sputtering device that can rapidly introduce gas into a sputtering chamber.
以下、本考案を図面に示す一実施例にもづいて
説明する。 Hereinafter, the present invention will be explained based on an embodiment shown in the drawings.
図に示す如く、スパツタ装置Ａは入口室１、ス
パツタ室２、出口室３が互いに仕切弁４ａ，４ｂ
を介して直列に接続される。また、被加工物の流
れ方向Ｆに沿う前記入口室１の上流側および出口
室３の下流側も夫々仕切弁４ｃ，４ｄで仕切られ
て居る。そして、前記スパツタ室２には、途中に
流量調節弁５ａ、止弁５ｂを備えた主ガス導入管
系５が接続されるとともに、図示省略の真空ポン
プを有する排気管系７が接続される。該排気管系
７にもその途中に流量調節弁７ａおよび止弁７ｂ
が設けられる。また、入口室１および出口室３に
夫々止弁８ａを介して排気管系８が接続されてい
る。 As shown in the figure, the sputtering device A has an inlet chamber 1, a sputtering chamber 2, and an outlet chamber 3 each having gate valves 4a and 4b.
connected in series via. Further, the upstream side of the inlet chamber 1 and the downstream side of the outlet chamber 3 along the flow direction F of the workpiece are also partitioned off by gate valves 4c and 4d, respectively. A main gas introduction pipe system 5 having a flow control valve 5a and a stop valve 5b in the middle thereof is connected to the sputtering chamber 2, and an exhaust pipe system 7 having a vacuum pump (not shown) is connected thereto. The exhaust pipe system 7 also has a flow control valve 7a and a stop valve 7b in the middle thereof.
will be provided. Further, an exhaust pipe system 8 is connected to the inlet chamber 1 and the outlet chamber 3 via stop valves 8a, respectively.
しかして、前記スパツタ室２には、前記主ガス
導入管系５に対しバイパス管系６が設けられて
る。このバイパス管系６は前記主ガス導入管系５
よりも大きな流量が得られるよう定められ、途中
に流量調節弁６ａと止弁６ｂとが設けられてい
る。 Thus, the sputtering chamber 2 is provided with a bypass pipe system 6 for the main gas introduction pipe system 5. This bypass pipe system 6 is the main gas introduction pipe system 5.
A flow rate adjustment valve 6a and a stop valve 6b are provided in the middle.
以上において次にその作動状態を説明する。入
口室１付近に搬送された被加工物（図示省略）は
入口側仕切弁４ｃが開かれて入口室１内に搬入さ
れる。前記仕切弁４ｃが閉じられて入口室１内は
真空排気される。所定の真空度が確保された後ス
パツタ室２との間の仕切弁４ａが開かれ被加工物
はスパツタ室２へ送られる。次いで、前記仕切弁
４ａが閉じられ、表面被膜の純度を高めるため真
空装置を起動してスパツタ室２を一且高真空（約
１×10-5Torr）状態とする。そして、スパツタ
リングを行なうためのアルゴンガス等の不活性ガ
スを導入する。即ち、先ずバイパス管系６を開放
して急速にスパツタ圧力（約１×10-2Torr）直
前まで前記ガスが導入される。その後、バイパス
管系６は閉じられ、主ガス導入管系５が開放され
て従来の方式に従つたスパツタ作用に切り換えら
れる。 Next, the operating state will be explained. The workpiece (not shown) transported to the vicinity of the entrance chamber 1 is transported into the entrance chamber 1 by opening the entrance side gate valve 4c. The gate valve 4c is closed and the inside of the inlet chamber 1 is evacuated. After a predetermined degree of vacuum is secured, the gate valve 4a between the sputtering chamber 2 and the sputtering chamber 2 is opened, and the workpiece is sent to the sputtering chamber 2. Next, the gate valve 4a is closed, and the vacuum device is activated to bring the sputtering chamber 2 into a high vacuum state (approximately 1×10 -5 Torr) in order to increase the purity of the surface coating. Then, an inert gas such as argon gas for sputtering is introduced. That is, first, the bypass pipe system 6 is opened and the gas is rapidly introduced to just below the sputter pressure (approximately 1×10 -2 Torr). Thereafter, the bypass line 6 is closed, the main gas introduction line 5 is opened, and the sputtering operation is switched over in a conventional manner.
スパツタの終つた被加工物は仕切弁４ｂが開か
れて出口室３へ移され、更に出口側仕切弁４ｄを
開いて装置外へ送り出される。 The sputtered workpiece is moved to the outlet chamber 3 by opening the gate valve 4b, and then sent out of the apparatus by opening the outlet side gate valve 4d.
実験によると、従来の主ガス導入管系５のみに
より高真空状態のスパツタ室２へスパツタ圧力ま
で不活性ガスを導入するのに約60秒かかつていた
のが、本考案のバイパス管系６によると約15秒で
前記と同様のスパツタ圧力に到達することができ
た。 According to experiments, it took about 60 seconds to introduce inert gas to the sputtering pressure into the sputtering chamber 2 in a high vacuum state using only the conventional main gas introduction piping system 5, but with the bypass piping system 6 of the present invention. It was possible to reach the same sputtering pressure as above in about 15 seconds.
本考案のスパツタ装置は以上の如く構成される
ので、高価な自動圧力コントローラ等を必要とせ
ず、短時間でスパツタ室内に所定圧力の不活性ガ
スを導入できることとなり、作業の高能率化と品
質の安定化に大いに効果を発揮することとなつ
た。しかも、主ガス導入管系およびバイパス管系
の各々に流量調節弁および止弁が設けられている
ので、被加工物（成膜物）のスパツタ室への出入
に際して、止弁の開閉操作だけで足り、一度調節
した調節弁をその度にいちいち再調節する必要が
ない。このことは弁操作に要する労力を軽減し、
時間の短縮を可能として連続式装置の厳しい時間
制約を充分に満たすこととなつた。 Since the sputtering device of the present invention is constructed as described above, it is possible to introduce inert gas at a predetermined pressure into the sputtering chamber in a short time without the need for an expensive automatic pressure controller, etc., thereby increasing work efficiency and quality. This proved to be highly effective in stabilizing the system. Moreover, since the main gas introduction piping system and the bypass piping system are each equipped with a flow control valve and a stop valve, all you need to do is open and close the stop valve when moving the workpiece (film-forming material) into and out of the sputtering chamber. There is no need to readjust the control valve once it has been adjusted. This reduces the effort required to operate the valve,
This made it possible to shorten the time and fully meet the strict time constraints of continuous equipment.
図は本考案の一実施例を示す正面図である。
Ａ……スパツタ装置、１……入口室、２……ス
パツタ室、３……出口室、４ａ，４ｂ，４ｃ，４
ｄ……仕切弁、５……主ガス導入管系、６……バ
イパス管系、７……排気管系。
The figure is a front view showing an embodiment of the present invention. A... Sputtering device, 1... Entrance chamber, 2... Sputtering chamber, 3... Outlet chamber, 4a, 4b, 4c, 4
d...Gate valve, 5...Main gas introduction pipe system, 6...Bypass pipe system, 7...Exhaust pipe system.
Claims (1)
弁を介して直列に接続され、前記スパツタ室に主
ガス導入管系が接続された連続スパツタ装置にお
いて、前記主ガス導入管系に対しバイパス管系が
接続され、該バイパス管系のガス流量は前記主ガ
ス導入管系のそれよりも大きく定められ、前記主
ガス導入管系および前記バイパス管系に各々流量
調節弁および止弁が設けられたことを特徴とする
連続スパツタ装置。 In a continuous sputtering apparatus in which an inlet chamber, a sputtering chamber, and an outlet chamber are connected to each other in series via a gate valve, and a main gas introduction pipe system is connected to the sputtering chamber, a bypass pipe system is provided to the main gas introduction pipe system. connected, the gas flow rate of the bypass pipe system is set to be larger than that of the main gas introduction pipe system, and the main gas introduction pipe system and the bypass pipe system are each provided with a flow rate control valve and a stop valve. Continuous sputtering device with special features.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19663982U JPS59100855U (en) | 1982-12-24 | 1982-12-24 | Continuous sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19663982U JPS59100855U (en) | 1982-12-24 | 1982-12-24 | Continuous sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59100855U JPS59100855U (en) | 1984-07-07 |
| JPS6321573Y2 true JPS6321573Y2 (en) | 1988-06-14 |
Family
ID=30421766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19663982U Granted JPS59100855U (en) | 1982-12-24 | 1982-12-24 | Continuous sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59100855U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130470A (en) * | 1980-03-14 | 1981-10-13 | Hitachi Ltd | Sputtering apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119100Y2 (en) * | 1972-06-27 | 1976-05-20 |
-
1982
- 1982-12-24 JP JP19663982U patent/JPS59100855U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130470A (en) * | 1980-03-14 | 1981-10-13 | Hitachi Ltd | Sputtering apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59100855U (en) | 1984-07-07 |
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