JPS6219731U - - Google Patents

Info

Publication number
JPS6219731U
JPS6219731U JP11116385U JP11116385U JPS6219731U JP S6219731 U JPS6219731 U JP S6219731U JP 11116385 U JP11116385 U JP 11116385U JP 11116385 U JP11116385 U JP 11116385U JP S6219731 U JPS6219731 U JP S6219731U
Authority
JP
Japan
Prior art keywords
reaction tube
holding
heating
thin film
film growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11116385U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11116385U priority Critical patent/JPS6219731U/ja
Publication of JPS6219731U publication Critical patent/JPS6219731U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の半導体薄膜成長装置の1実
施例の断面図、第2図は従来の半導体薄膜成長装
置の断面図である。 10……反応管、12……原料ガス導体口、1
3……ガス排出口、17……半導体基板、19…
…保持手段、20……高周波誘導加熱コイル。
FIG. 1 is a sectional view of one embodiment of the semiconductor thin film growth apparatus of this invention, and FIG. 2 is a sectional view of a conventional semiconductor thin film growth apparatus. 10... Reaction tube, 12... Raw material gas conductor port, 1
3...Gas exhaust port, 17...Semiconductor substrate, 19...
...Holding means, 20...High frequency induction heating coil.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 下端部および上端部にそれぞれ原料ガス導入口
およびガス排出口が形成された反応管と、前記反
応管内に設けられ半導体基板を下向きに保持する
保持手段と、前記基板を加熱する加熱手段とを備
えた半導体薄膜成長装置。
A reaction tube having a raw material gas inlet and a gas outlet formed at a lower end and an upper end, respectively, a holding means provided in the reaction tube for holding a semiconductor substrate facing downward, and a heating means for heating the substrate. Semiconductor thin film growth equipment.
JP11116385U 1985-07-20 1985-07-20 Pending JPS6219731U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11116385U JPS6219731U (en) 1985-07-20 1985-07-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11116385U JPS6219731U (en) 1985-07-20 1985-07-20

Publications (1)

Publication Number Publication Date
JPS6219731U true JPS6219731U (en) 1987-02-05

Family

ID=30990829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11116385U Pending JPS6219731U (en) 1985-07-20 1985-07-20

Country Status (1)

Country Link
JP (1) JPS6219731U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936551A (en) * 1972-06-29 1974-04-04
JPS5713795U (en) * 1980-06-30 1982-01-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936551A (en) * 1972-06-29 1974-04-04
JPS5713795U (en) * 1980-06-30 1982-01-23

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