JPS6311575U - - Google Patents

Info

Publication number
JPS6311575U
JPS6311575U JP10304286U JP10304286U JPS6311575U JP S6311575 U JPS6311575 U JP S6311575U JP 10304286 U JP10304286 U JP 10304286U JP 10304286 U JP10304286 U JP 10304286U JP S6311575 U JPS6311575 U JP S6311575U
Authority
JP
Japan
Prior art keywords
bell gear
base
susceptor
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10304286U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10304286U priority Critical patent/JPS6311575U/ja
Publication of JPS6311575U publication Critical patent/JPS6311575U/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す縦型気相成長
装置の概要断面図、第2図および第3図は従来の
縦型気相成長装置のそれぞれ異なる例を示す概要
断面図である。 1……基台、4……気密室、5……サセプタ、
6……回転軸、7……基板、8……ノズル、9…
…RFコイル、11……排気管、32……金属ベ
ルジヤ、20……石英ベルジヤ、25……空間、
33……冷却水導入口、34……冷却水排出口。
FIG. 1 is a schematic sectional view of a vertical vapor phase growth apparatus showing an embodiment of the present invention, and FIGS. 2 and 3 are schematic sectional views showing different examples of conventional vertical vapor growth apparatuses. . 1... Base, 4... Airtight chamber, 5... Susceptor,
6... Rotating shaft, 7... Substrate, 8... Nozzle, 9...
...RF coil, 11...exhaust pipe, 32...metal bell gear, 20...quartz bell gear, 25...space,
33...Cooling water inlet, 34...Cooling water outlet.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基台上に水平に設けられているサセプタ上に載
置した複数の基板の表面に半導体物質のエピタキ
シヤル薄膜を気相成長させる気密室を前記サセプ
タの周囲に前記基台と石英ベルジヤ等とによつて
構成すると共に前記石英ベルジヤの外側に金属ベ
ルジヤを被せてなる気相成長装置において、前記
石英ベルジヤと前記金属ベルジヤの間の空間に冷
却水を流すための冷却水給排手段を備えた気相成
長装置。
An airtight chamber is provided around the susceptor between the base and a quartz bell gear, etc., in which epitaxial thin films of semiconductor materials are grown in a vapor phase on the surfaces of a plurality of substrates placed on a susceptor horizontally provided on the base. In this vapor phase growth apparatus, the quartz bell gear is covered with a metal bell gear on the outside. Phase growth device.
JP10304286U 1986-07-04 1986-07-04 Pending JPS6311575U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10304286U JPS6311575U (en) 1986-07-04 1986-07-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10304286U JPS6311575U (en) 1986-07-04 1986-07-04

Publications (1)

Publication Number Publication Date
JPS6311575U true JPS6311575U (en) 1988-01-26

Family

ID=30975233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10304286U Pending JPS6311575U (en) 1986-07-04 1986-07-04

Country Status (1)

Country Link
JP (1) JPS6311575U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8215119B2 (en) 2007-11-01 2012-07-10 Mitsubishi Electric Corporation Refrigerant filling apparatus of refrigerating and air conditioning apparatus and refrigerant filling method of refrigerating and air conditioning apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8215119B2 (en) 2007-11-01 2012-07-10 Mitsubishi Electric Corporation Refrigerant filling apparatus of refrigerating and air conditioning apparatus and refrigerant filling method of refrigerating and air conditioning apparatus

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