JPS6075460U - Plasma vapor phase growth equipment - Google Patents

Plasma vapor phase growth equipment

Info

Publication number
JPS6075460U
JPS6075460U JP16767283U JP16767283U JPS6075460U JP S6075460 U JPS6075460 U JP S6075460U JP 16767283 U JP16767283 U JP 16767283U JP 16767283 U JP16767283 U JP 16767283U JP S6075460 U JPS6075460 U JP S6075460U
Authority
JP
Japan
Prior art keywords
vapor phase
plasma vapor
phase growth
growth equipment
abstract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16767283U
Other languages
Japanese (ja)
Other versions
JPS6140774Y2 (en
Inventor
赤井　良夫
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP16767283U priority Critical patent/JPS6075460U/en
Publication of JPS6075460U publication Critical patent/JPS6075460U/en
Application granted granted Critical
Publication of JPS6140774Y2 publication Critical patent/JPS6140774Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来装置の模式的概略構成図、第２図は本発明
の一実施例の模式的概略構成図である。 図において、１は反応室、２は上蓋、３は受台、４は高
周波電極、５はシールバッキング、６は被覆膜、７は回
転シャフト支持管、８は排気管、９は回転サセプタ、１
０は回転シャフト、１１はシールバッキング、１２は反
応ガス導入孔、１３は半導体基板（試料）、１４は加熱
ヒータ、２０は高周波電極、２１は高周波電極２０の試
料対向面を示す。FIG. 1 is a schematic diagram of a conventional device, and FIG. 2 is a schematic diagram of an embodiment of the present invention. In the figure, 1 is a reaction chamber, 2 is an upper lid, 3 is a pedestal, 4 is a high frequency electrode, 5 is a seal backing, 6 is a coating film, 7 is a rotating shaft support tube, 8 is an exhaust pipe, 9 is a rotating susceptor, 1
0 is a rotating shaft, 11 is a seal backing, 12 is a reactive gas introduction hole, 13 is a semiconductor substrate (sample), 14 is a heater, 20 is a high frequency electrode, and 21 is a surface of the high frequency electrode 20 facing the sample.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 凹凸のある粗面からなる試料対方向を有する電極が設け
られたことを特徴とするプラズマ気相成長装置。A plasma vapor phase epitaxy apparatus characterized in that an electrode having a rough surface with an uneven surface facing the sample is provided.
JP16767283U 1983-10-28 1983-10-28 Plasma vapor phase growth equipment Granted JPS6075460U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16767283U JPS6075460U (en) 1983-10-28 1983-10-28 Plasma vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16767283U JPS6075460U (en) 1983-10-28 1983-10-28 Plasma vapor phase growth equipment

Publications (2)

Publication Number Publication Date
JPS6075460U true JPS6075460U (en) 1985-05-27
JPS6140774Y2 JPS6140774Y2 (en) 1986-11-20

Family

ID=30366770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16767283U Granted JPS6075460U (en) 1983-10-28 1983-10-28 Plasma vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS6075460U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199213A (en) * 1987-10-13 1989-04-18 Mitsui Toatsu Chem Inc Device for formation of film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199213A (en) * 1987-10-13 1989-04-18 Mitsui Toatsu Chem Inc Device for formation of film

Also Published As

Publication number Publication date
JPS6140774Y2 (en) 1986-11-20

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