JPS59140435U - Vapor phase growth equipment - Google Patents

Vapor phase growth equipment

Info

Publication number
JPS59140435U
JPS59140435U JP3359583U JP3359583U JPS59140435U JP S59140435 U JPS59140435 U JP S59140435U JP 3359583 U JP3359583 U JP 3359583U JP 3359583 U JP3359583 U JP 3359583U JP S59140435 U JPS59140435 U JP S59140435U
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth equipment
baffle
growth apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3359583U
Other languages
Japanese (ja)
Inventor
宏邦 難波
鍛治　幹雄
Original Assignee
住友電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友電気工業株式会社 filed Critical 住友電気工業株式会社
Priority to JP3359583U priority Critical patent/JPS59140435U/en
Publication of JPS59140435U publication Critical patent/JPS59140435U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の気相成長装置の例を示す縦断面図である
。第２図は本考案装置の実施例を示す縦断面図である。 第３図は第２図に示すバッフルの例を示す上面図である
。 １・・・反応容器、２・・・サセプター、３・・・基板
、４・・・高周波コイル、５・・・回転軸、６・・・原
料ガス供給孔、７・・・原料ガス、８・・・排気孔、９
・・・バッフル、１０・・・円板、１１・・・小孔。FIG. 1 is a longitudinal sectional view showing an example of a conventional vapor phase growth apparatus. FIG. 2 is a longitudinal sectional view showing an embodiment of the device of the present invention. FIG. 3 is a top view showing an example of the baffle shown in FIG. 2. DESCRIPTION OF SYMBOLS 1... Reaction container, 2... Susceptor, 3... Substrate, 4... High frequency coil, 5... Rotating shaft, 6... Raw material gas supply hole, 7... Raw material gas, 8 ...exhaust hole, 9
... Baffle, 10... Disk, 11... Small hole.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）有機金属化合物化学蒸着法による気相成長装置に
おいて、基板のサセプターの直下にガス流を均一化する
バッフルを設けたことを特徴とする気相成長装置。(1) A vapor phase growth apparatus using an organometallic compound chemical vapor deposition method, characterized in that a baffle is provided directly below a susceptor of a substrate to make the gas flow uniform. （２）バッフルが、中心対称に複数個の小孔をあけた１
枚又は複数枚の板状物より成る実用新案登録請求の範囲
第１項記載の気相成長装置。(2) The baffle has multiple small holes symmetrically centered 1
A vapor phase growth apparatus according to claim 1, which is comprised of one or more plates.
JP3359583U 1983-03-08 1983-03-08 Vapor phase growth equipment Pending JPS59140435U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3359583U JPS59140435U (en) 1983-03-08 1983-03-08 Vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3359583U JPS59140435U (en) 1983-03-08 1983-03-08 Vapor phase growth equipment

Publications (1)

Publication Number Publication Date
JPS59140435U true JPS59140435U (en) 1984-09-19

Family

ID=30164378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3359583U Pending JPS59140435U (en) 1983-03-08 1983-03-08 Vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS59140435U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003504891A (en) * 1999-07-13 2003-02-04 ノードソン コーポレーション High-speed symmetric plasma processing system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003504891A (en) * 1999-07-13 2003-02-04 ノードソン コーポレーション High-speed symmetric plasma processing system

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