JPS60118234U - Vapor phase growth equipment - Google Patents

Vapor phase growth equipment

Info

Publication number
JPS60118234U
JPS60118234U JP508884U JP508884U JPS60118234U JP S60118234 U JPS60118234 U JP S60118234U JP 508884 U JP508884 U JP 508884U JP 508884 U JP508884 U JP 508884U JP S60118234 U JPS60118234 U JP S60118234U
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth equipment
susceptor
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP508884U
Other languages
Japanese (ja)
Inventor
久良 矢元
野田　実也
渡辺　桂
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP508884U priority Critical patent/JPS60118234U/en
Publication of JPS60118234U publication Critical patent/JPS60118234U/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例の気相成長装置の側断面図で
ある。 １１・・・・・・ヘルシャ、１２・・・・・・反応室、
１３・・・・・・サセプタ、１５・・・・・・半導体ウ
ェハ、１７・・・・・・ワークコイル、１８・・・・・
・ノズル、２０・・・・・・排気口。FIG. 1 is a sectional side view of a vapor phase growth apparatus according to an embodiment of the present invention. 11...Hersha, 12...Reaction chamber,
13... Susceptor, 15... Semiconductor wafer, 17... Work coil, 18...
・Nozzle, 20...exhaust port.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ウェハを載置するサセプタと、このサセプタを誘
導加熱するワークコイルを有する誘導加熱形の気相成長
装置において、上記ワークコイルが高融点金属またはそ
の合金または高融点金属のシリコン化合物で形成されて
いることを特徴とする気相成長装置。In an induction heating type vapor phase growth apparatus having a susceptor on which a semiconductor wafer is placed and a work coil for induction heating the susceptor, the work coil is formed of a high melting point metal, an alloy thereof, or a silicon compound of the high melting point metal. A vapor phase growth apparatus characterized by:
JP508884U 1984-01-18 1984-01-18 Vapor phase growth equipment Pending JPS60118234U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP508884U JPS60118234U (en) 1984-01-18 1984-01-18 Vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP508884U JPS60118234U (en) 1984-01-18 1984-01-18 Vapor phase growth equipment

Publications (1)

Publication Number Publication Date
JPS60118234U true JPS60118234U (en) 1985-08-09

Family

ID=30481281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP508884U Pending JPS60118234U (en) 1984-01-18 1984-01-18 Vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS60118234U (en)

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