JPS5812941U - Susceptor for vapor phase growth equipment - Google Patents
Susceptor for vapor phase growth equipmentInfo
- Publication number
- JPS5812941U JPS5812941U JP10555381U JP10555381U JPS5812941U JP S5812941 U JPS5812941 U JP S5812941U JP 10555381 U JP10555381 U JP 10555381U JP 10555381 U JP10555381 U JP 10555381U JP S5812941 U JPS5812941 U JP S5812941U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vapor phase
- phase growth
- growth equipment
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のサセプタを用いた気相成長装置の概略的
縦断正面図、第２図は本考案サセプタの一実施例を用い
た気相成長装置の概略的縦断正面図、第３図は本考案サ
セプタの半導体ウェハ載置状態の断面図、第４図イ９口
、ハは本考案サセプタのそれぞれ異なる他の実施例を示
す断面図である。
２・・・反応室、３・・・反応容器（ベルジャ）、５・
・・サセプタ、１３・・・反応ガス、１７・・・半導体
ウェハ、５ａ、 ５ｂ・・・半導体ウェハ載置面。FIG. 1 is a schematic longitudinal sectional front view of a vapor phase growth apparatus using a conventional susceptor, FIG. 2 is a schematic longitudinal sectional front view of a vapor phase growth apparatus using an embodiment of the susceptor of the present invention, and FIG. A cross-sectional view of the susceptor of the present invention in a state in which a semiconductor wafer is placed therein. FIGS. 2... Reaction chamber, 3... Reaction container (belljar), 5.
... Susceptor, 13... Reactive gas, 17... Semiconductor wafer, 5a, 5b... Semiconductor wafer mounting surface.
Claims (1)
サセプタを回転させる之ともにこのサセプタを加熱した
状態で反応室内に反応ガスを流すことにより上記半導体
ウェハのエピタキシャル成長を行なわせるようにした気
相成長装置用のもので、径方向に複数の半導体ウェハを
載置できる載置面を有し、少くともその一部の半導体ウ
ェハ載置面が径方向に沿って傾斜されていることを特徴
とする気相成長装置用サセプタ。A vapor phase system in which epitaxial growth of the semiconductor wafer is performed by rotating a susceptor on which a semiconductor wafer is placed in a reaction chamber surrounded by a reaction container, and flowing a reaction gas into the reaction chamber while heating the susceptor. It is for use in a growth apparatus, and has a mounting surface on which a plurality of semiconductor wafers can be mounted in the radial direction, and is characterized in that at least a part of the semiconductor wafer mounting surface is inclined along the radial direction. Susceptor for vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10555381U JPS5812941U (en) | 1981-07-16 | 1981-07-16 | Susceptor for vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10555381U JPS5812941U (en) | 1981-07-16 | 1981-07-16 | Susceptor for vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5812941U true JPS5812941U (en) | 1983-01-27 |
Family
ID=29900085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10555381U Pending JPS5812941U (en) | 1981-07-16 | 1981-07-16 | Susceptor for vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812941U (en) |
-
1981
- 1981-07-16 JP JP10555381U patent/JPS5812941U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5812941U (en) | Susceptor for vapor phase growth equipment | |
| JPS6018541U (en) | Vapor phase growth equipment | |
| JPS60119743U (en) | chemical vapor deposition equipment | |
| JPS58168575U (en) | Metal-organic vapor phase epitaxy equipment | |
| JPS6075460U (en) | Plasma vapor phase growth equipment | |
| JPS59140435U (en) | Vapor phase growth equipment | |
| JPS59185828U (en) | semiconductor manufacturing equipment | |
| JPS6144829U (en) | Vapor phase epitaxial growth equipment using thermal decomposition of Group 3-5 compound semiconductors | |
| JPS5945926U (en) | chemical vapor deposition equipment | |
| JPS60118234U (en) | Vapor phase growth equipment | |
| JPS60185331U (en) | Vapor phase growth equipment | |
| JPS6139937U (en) | Diffusion furnace type vapor phase growth equipment | |
| JPS59131148U (en) | Vertical vapor phase growth apparatus | |
| JPS5234666A (en) | Semi-conductor wafer processing | |
| JPS6096820U (en) | Vapor phase growth nozzle | |
| JPS60144234U (en) | Silicon vertical epitaxial growth equipment | |
| JPS6025750U (en) | Vapor phase growth equipment | |
| JPS6013970U (en) | Vapor phase growth equipment | |
| JPS59159941U (en) | Semiconductor device manufacturing equipment | |
| JPS5885336U (en) | Semiconductor vapor phase growth equipment | |
| JPS60147676U (en) | Vapor phase growth equipment | |
| JPH01312834A (en) | Atmospheric cvd device | |
| JPS60103827U (en) | semiconductor manufacturing equipment | |
| JPS60116229U (en) | Heat generating carrier for semiconductor wafer | |
| JPS6150760U (en) |