JPS59159941U - Semiconductor device manufacturing equipment - Google Patents
Semiconductor device manufacturing equipmentInfo
- Publication number
- JPS59159941U JPS59159941U JP5430783U JP5430783U JPS59159941U JP S59159941 U JPS59159941 U JP S59159941U JP 5430783 U JP5430783 U JP 5430783U JP 5430783 U JP5430783 U JP 5430783U JP S59159941 U JPS59159941 U JP S59159941U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- device manufacturing
- manufacturing equipment
- manufacturing apparatus
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は半導体装置の製造装置の例を示す断面図、第2
図は第1図の要部の例を示す平面図、第3図は本考案の
説明に供する断面図、第4図は本考案半導体装置の製造
装置の一実施例の要部の例を示す断面図、第5図は第4
図の説明に供する断面図、第6図に第14図は夫々本考
案の他の実施例の要部の例を示す断面図である。
1は反応室、2はサセプタ、3は試料台、4はシリコン
ウェハ、10はSiO2膜、11はSiN、膜である。FIG. 1 is a cross-sectional view showing an example of a semiconductor device manufacturing apparatus, and FIG.
The figure is a plan view showing an example of the essential parts of Fig. 1, Fig. 3 is a sectional view for explaining the present invention, and Fig. 4 is an example of the essential parts of an embodiment of the semiconductor device manufacturing apparatus of the present invention. Cross-sectional view, Figure 5 is the 4th
6 and 14 are cross-sectional views for explaining the figures, respectively, showing examples of essential parts of other embodiments of the present invention. 1 is a reaction chamber, 2 is a susceptor, 3 is a sample stage, 4 is a silicon wafer, 10 is a SiO2 film, and 11 is a SiN film.
Claims (1)
成長法により、該半導体ウェハ上に薄膜を形成する半導
体装置の製造装置に於いて、上記サセプタの試料台をそ
の中心部より周辺部に亘って凹状又は凸状となる如き形
状とする様にしたことを特徴とする半導体装置の製造装
置。In a semiconductor device manufacturing apparatus in which a semiconductor wafer is placed on a sample stand of a susceptor and a thin film is formed on the semiconductor wafer by chemical vapor deposition, the sample stand of the susceptor is placed from the center to the periphery. 1. A semiconductor device manufacturing apparatus, characterized in that the semiconductor device has a concave or convex shape throughout.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5430783U JPS59159941U (en) | 1983-04-12 | 1983-04-12 | Semiconductor device manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5430783U JPS59159941U (en) | 1983-04-12 | 1983-04-12 | Semiconductor device manufacturing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59159941U true JPS59159941U (en) | 1984-10-26 |
Family
ID=30184651
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5430783U Pending JPS59159941U (en) | 1983-04-12 | 1983-04-12 | Semiconductor device manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59159941U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273621A (en) * | 1985-09-26 | 1987-04-04 | Matsushita Electric Ind Co Ltd | Vapor growth device |
JPH02189920A (en) * | 1989-01-18 | 1990-07-25 | Nec Corp | Forming method for oxide film and oxidizing device |
-
1983
- 1983-04-12 JP JP5430783U patent/JPS59159941U/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6273621A (en) * | 1985-09-26 | 1987-04-04 | Matsushita Electric Ind Co Ltd | Vapor growth device |
JPH02189920A (en) * | 1989-01-18 | 1990-07-25 | Nec Corp | Forming method for oxide film and oxidizing device |
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