JPS59159941U - Semiconductor device manufacturing equipment - Google Patents

Semiconductor device manufacturing equipment

Info

Publication number
JPS59159941U
JPS59159941U JP5430783U JP5430783U JPS59159941U JP S59159941 U JPS59159941 U JP S59159941U JP 5430783 U JP5430783 U JP 5430783U JP 5430783 U JP5430783 U JP 5430783U JP S59159941 U JPS59159941 U JP S59159941U
Authority
JP
Japan
Prior art keywords
semiconductor device
device manufacturing
manufacturing equipment
manufacturing apparatus
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5430783U
Other languages
Japanese (ja)
Inventor
忠弘 楠田
孝二 佐藤
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP5430783U priority Critical patent/JPS59159941U/en
Publication of JPS59159941U publication Critical patent/JPS59159941U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は半導体装置の製造装置の例を示す断面図、第2
図は第1図の要部の例を示す平面図、第3図は本考案の
説明に供する断面図、第4図は本考案半導体装置の製造
装置の一実施例の要部の例を示す断面図、第5図は第4
図の説明に供する断面図、第6図に第14図は夫々本考
案の他の実施例の要部の例を示す断面図である。 1は反応室、2はサセプタ、3は試料台、4はシリコン
ウェハ、10はSiO2膜、11はSiN、膜である。
FIG. 1 is a cross-sectional view showing an example of a semiconductor device manufacturing apparatus, and FIG.
The figure is a plan view showing an example of the essential parts of Fig. 1, Fig. 3 is a sectional view for explaining the present invention, and Fig. 4 is an example of the essential parts of an embodiment of the semiconductor device manufacturing apparatus of the present invention. Cross-sectional view, Figure 5 is the 4th
6 and 14 are cross-sectional views for explaining the figures, respectively, showing examples of essential parts of other embodiments of the present invention. 1 is a reaction chamber, 2 is a susceptor, 3 is a sample stage, 4 is a silicon wafer, 10 is a SiO2 film, and 11 is a SiN film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ウェハをサセプタの試料台に載置し、化学的気相
成長法により、該半導体ウェハ上に薄膜を形成する半導
体装置の製造装置に於いて、上記サセプタの試料台をそ
の中心部より周辺部に亘って凹状又は凸状となる如き形
状とする様にしたことを特徴とする半導体装置の製造装
置。
In a semiconductor device manufacturing apparatus in which a semiconductor wafer is placed on a sample stand of a susceptor and a thin film is formed on the semiconductor wafer by chemical vapor deposition, the sample stand of the susceptor is placed from the center to the periphery. 1. A semiconductor device manufacturing apparatus, characterized in that the semiconductor device has a concave or convex shape throughout.
JP5430783U 1983-04-12 1983-04-12 Semiconductor device manufacturing equipment Pending JPS59159941U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5430783U JPS59159941U (en) 1983-04-12 1983-04-12 Semiconductor device manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5430783U JPS59159941U (en) 1983-04-12 1983-04-12 Semiconductor device manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS59159941U true JPS59159941U (en) 1984-10-26

Family

ID=30184651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5430783U Pending JPS59159941U (en) 1983-04-12 1983-04-12 Semiconductor device manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS59159941U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273621A (en) * 1985-09-26 1987-04-04 Matsushita Electric Ind Co Ltd Vapor growth device
JPH02189920A (en) * 1989-01-18 1990-07-25 Nec Corp Forming method for oxide film and oxidizing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273621A (en) * 1985-09-26 1987-04-04 Matsushita Electric Ind Co Ltd Vapor growth device
JPH02189920A (en) * 1989-01-18 1990-07-25 Nec Corp Forming method for oxide film and oxidizing device

Similar Documents

Publication Publication Date Title
JPS59159941U (en) Semiconductor device manufacturing equipment
JPS599084U (en) chemical vapor deposition equipment
JPS6134753U (en) semiconductor equipment
JPS59187139U (en) semiconductor wafer holder equipment
JPS6054327U (en) semiconductor manufacturing equipment
JPS619835U (en) semiconductor manufacturing equipment
JPS6127235U (en) Semiconductor device manufacturing equipment
JPS60103827U (en) semiconductor manufacturing equipment
JPS605133U (en) semiconductor equipment
JPS60103142U (en) Bernoulli type semiconductor substrate transfer equipment
JPS5950442U (en) wafer holder
JPS5924770U (en) Cooling pad for vacuum equipment
JPS60117857U (en) Wafer holder for vapor deposition machine
JPS5993152U (en) thin film semiconductor device
JPS59117139U (en) semiconductor manufacturing equipment
JPS5812268U (en) Vapor deposition equipment
JPS6035536U (en) Reduced pressure vapor phase growth equipment
JPS5991728U (en) Semiconductor substrate holding jig
JPS5945926U (en) chemical vapor deposition equipment
JPS6073231U (en) Semiconductor device manufacturing equipment
JPS6016535U (en) Vapor phase growth equipment
JPS6085835U (en) Micro parts tray
JPS5933240U (en) centrifugal dryer
JPS6073242U (en) semiconductor equipment
JPH01127233U (en)