JPS6150760U - - Google Patents
Info
- Publication number
- JPS6150760U JPS6150760U JP13414784U JP13414784U JPS6150760U JP S6150760 U JPS6150760 U JP S6150760U JP 13414784 U JP13414784 U JP 13414784U JP 13414784 U JP13414784 U JP 13414784U JP S6150760 U JPS6150760 U JP S6150760U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- support
- exhaust section
- buffer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の一実施例である気相成長装置
を示す概略的構成図、第２図は本考案の第１の他
の実施例を示す概略的構成図、第３図は同じく第
２の他の実施例を示す概略的構成図、第４図は従
来例を示す概略的構成図である。
Ａ……反応室、１７……サセプタ（支持体）、
１６……ウエハ（被処理体）、１３……排気管（
排気部）、１８……バツフアー。
FIG. 1 is a schematic block diagram showing a vapor phase growth apparatus which is an embodiment of the present invention, FIG. 2 is a schematic block diagram showing a first other embodiment of the present invention, and FIG. FIG. 4 is a schematic configuration diagram showing another embodiment of No. 2, and FIG. 4 is a schematic configuration diagram showing a conventional example. A... Reaction chamber, 17... Susceptor (support),
16...Wafer (object to be processed), 13...Exhaust pipe (
Exhaust part), 18... Batsufua.
Claims (1)
理体を設け、前記反応室内に反応ガスを供給して
前記被処理体に気相成長させたのち、反応ガスを
排気部から排出させるものにおいて、前記支持体
の排気部側に、前記支持体の表面上を通過して前
記排気部に向かう反応ガスの流れを整流するバツ
フアーを設けたことを特徴とする気相成長装置。 (2) バツフアーは石英、窒化硅素、炭化硅素あ
るいはシリコンにより構成されたことを特徴とす
る実用新案登録請求の範囲第１項記載の気相成長
装置。[Claims for Utility Model Registration] (1) After providing a processing object supported by a support in a reaction chamber, and supplying a reaction gas into the reaction chamber to cause vapor phase growth on the processing object, The reactant gas is discharged from the exhaust section, characterized in that a buffer is provided on the exhaust section side of the support for rectifying the flow of the reaction gas passing over the surface of the support toward the exhaust section. vapor phase growth equipment. (2) The vapor phase growth apparatus according to claim 1, wherein the buffer is made of quartz, silicon nitride, silicon carbide, or silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13414784U JPS6150760U (en) | 1984-09-04 | 1984-09-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13414784U JPS6150760U (en) | 1984-09-04 | 1984-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6150760U true JPS6150760U (en) | 1986-04-05 |
Family
ID=30692667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13414784U Pending JPS6150760U (en) | 1984-09-04 | 1984-09-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6150760U (en) |
-
1984
- 1984-09-04 JP JP13414784U patent/JPS6150760U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6150760U (en) | ||
| JPS6190856U (en) | ||
| JPS62142839U (en) | ||
| JPS6139937U (en) | Diffusion furnace type vapor phase growth equipment | |
| JPS63140619U (en) | ||
| JPS5595700A (en) | Vapor phase growing jig | |
| JPS5812941U (en) | Susceptor for vapor phase growth equipment | |
| JPH0351834U (en) | ||
| JPH0320434U (en) | ||
| JPS63106766U (en) | ||
| JPH01148788A (en) | Device for vapor phase epitaxial growth | |
| JPS62126362U (en) | ||
| JPS54144868A (en) | Heat treatment unit | |
| JPS62145334U (en) | ||
| JPS6227570A (en) | Vacuum vapor growth device | |
| JPS62148574U (en) | ||
| JPH03117832U (en) | ||
| JPH0165872U (en) | ||
| JPS6262432U (en) | ||
| JPS63140618U (en) | ||
| JPS60118234U (en) | Vapor phase growth equipment | |
| JPS60185331U (en) | Vapor phase growth equipment | |
| JPH0722124B2 (en) | Exhaust gas device for CVD furnace | |
| JPS6265831U (en) | ||
| JPS568814A (en) | Epitaxial growth of silicon under reduced pressure |