JPS6144829U - Vapor phase epitaxial growth equipment using thermal decomposition of Group 3-5 compound semiconductors - Google Patents
Vapor phase epitaxial growth equipment using thermal decomposition of Group 3-5 compound semiconductorsInfo
- Publication number
- JPS6144829U JPS6144829U JP12824684U JP12824684U JPS6144829U JP S6144829 U JPS6144829 U JP S6144829U JP 12824684 U JP12824684 U JP 12824684U JP 12824684 U JP12824684 U JP 12824684U JP S6144829 U JPS6144829 U JP S6144829U
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- epitaxial growth
- substrate
- tube
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案に係る気相エビタキシャル成長装置の一
実施例を示しａはエビタキシャル成長層形成時、ｂは反
応管のガス排出時における夫々の縦断正面説明図、第２
図は基板上に積層されたエビタキシャル成長層を示す正
面説明図、第３図は同成長装置の他実施例を示した縦断
正面図、第４図は同装置の異種例による反応管上部の縦
断正面図、第５図は従来の同装！を示した縦断正面説明
１層−９，、２−ユえ。
、３−ｖ−ｂｌ９支持体、４・・・・・・サセプタ、５
・・・・・・基板、６・・・・・・加熱部、９・・・・
・・導入口、１０・・・・・・導入口。FIG. 1 shows an embodiment of the vapor phase epitaxial growth apparatus according to the present invention, and FIG.
The figure is a front explanatory view showing the epitaxial growth layer stacked on the substrate, Figure 3 is a longitudinal sectional front view showing another embodiment of the same growth apparatus, and Figure 4 is a different example of the same apparatus showing the upper part of the reaction tube. Vertical front view, Figure 5 is the same as the conventional one! Vertical front view showing 1st layer-9, 2-Yue. , 3-v-bl9 support, 4... susceptor, 5
...Substrate, 6...Heating part, 9...
...Introduction port, 10...Introduction port.
Claims (3)
キャリアガスとを管内に導入し、上記反応管の中段部外
側に配した加熱部によって、同管内に装出したサセプタ
支持体上のサセプタに載置せる基板を加熱自在となし、
当該反応管の下部に開口した排気口から排気可能として
、上記基板上に所要のエビタキシャル成長層を得るよう
にしたものにおいて、前記導木口は、所望の原料ガスと
キャリアガスとを管内に導入する二つの導入口からなり
、一方の導入口と前記サセプタに載置の基板とを、相対
向位置から離間位置まで相対変位まで相対変位自在とし
てなる■一Ｖ族化合物半導体の熱分解による気相エビタ
キシャル成長装置。(1) Raw material gas and carrier gas are introduced into the tube through the inlet opening at the top of the reaction tube, and the heating section placed outside the middle section of the reaction tube is used to heat the susceptor support loaded into the tube. The substrate placed on the susceptor can be heated freely,
The reaction tube is configured to be able to be evacuated from an exhaust port opened at the bottom of the reaction tube to obtain the required epitaxial growth layer on the substrate, and the guide port introduces desired raw material gas and carrier gas into the tube. One of the inlets and the substrate placed on the susceptor can be relatively displaced from a facing position to a separated position. Evitaxial growth device.
され、サセプタ支持体は反応管に回転自在なるよう．縦
装貫設され、当該回転により基板が一方の導入口直下位
置から離間位置に変位自在である■一■族化合物半導体
の熱分解による気相エピタキシャル成長装置。(2) Two inlets are fixedly opened at the top of the reaction tube, and the susceptor support is rotatable in the reaction tube. A vapor phase epitaxial growth apparatus using thermal decomposition of a Group 1 compound semiconductor, in which the substrate is vertically installed and can be freely displaced from a position immediately below one inlet to a position separated by the rotation.
よう開口され、サセプタ支持体は反応管に固設にて縦装
され、上記導入口の回転変移によって、一方の導入口を
基板の直上位置から離間位置に変位自在とした■−■族
化合物半導体の熱分解による気相エビタキシャル成長装
置。(3) Two inlets are rotatably opened at the top of the reaction tube, the susceptor support is fixedly mounted vertically in the reaction tube, and one inlet is connected to the substrate by rotating the inlet. A vapor phase epitaxial growth device using thermal decomposition of ■-■ group compound semiconductors that can be freely displaced from a directly above position to a separated position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12824684U JPS6144829U (en) | 1984-08-24 | 1984-08-24 | Vapor phase epitaxial growth equipment using thermal decomposition of Group 3-5 compound semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12824684U JPS6144829U (en) | 1984-08-24 | 1984-08-24 | Vapor phase epitaxial growth equipment using thermal decomposition of Group 3-5 compound semiconductors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6144829U true JPS6144829U (en) | 1986-03-25 |
Family
ID=30686877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12824684U Pending JPS6144829U (en) | 1984-08-24 | 1984-08-24 | Vapor phase epitaxial growth equipment using thermal decomposition of Group 3-5 compound semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144829U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218050A (en) * | 1988-07-06 | 1990-01-22 | Ibiden Co Ltd | Metallic-textured melamine resin decorative sheet |
| JPH0480032A (en) * | 1990-07-24 | 1992-03-13 | Sumitomo Bakelite Co Ltd | Composite sheet with design characteristics |
| JPH05169607A (en) * | 1991-12-25 | 1993-07-09 | Sumitomo Bakelite Co Ltd | Manufacture of decorative composite sheet |
| JPH05177787A (en) * | 1991-12-27 | 1993-07-20 | Bando Chem Ind Ltd | Laminated sheet and production thereof |
-
1984
- 1984-08-24 JP JP12824684U patent/JPS6144829U/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218050A (en) * | 1988-07-06 | 1990-01-22 | Ibiden Co Ltd | Metallic-textured melamine resin decorative sheet |
| JPH072413B2 (en) * | 1988-07-06 | 1995-01-18 | イビデン株式会社 | Metallic melamine resin decorative board |
| JPH0480032A (en) * | 1990-07-24 | 1992-03-13 | Sumitomo Bakelite Co Ltd | Composite sheet with design characteristics |
| JPH0583372B2 (en) * | 1990-07-24 | 1993-11-25 | Sumitomo Bakelite Co | |
| JPH05169607A (en) * | 1991-12-25 | 1993-07-09 | Sumitomo Bakelite Co Ltd | Manufacture of decorative composite sheet |
| JPH05177787A (en) * | 1991-12-27 | 1993-07-20 | Bando Chem Ind Ltd | Laminated sheet and production thereof |
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