JPS61192443U - - Google Patents
Info
- Publication number
- JPS61192443U JPS61192443U JP7619385U JP7619385U JPS61192443U JP S61192443 U JPS61192443 U JP S61192443U JP 7619385 U JP7619385 U JP 7619385U JP 7619385 U JP7619385 U JP 7619385U JP S61192443 U JPS61192443 U JP S61192443U
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- thin film
- vapor phase
- phase growth
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図、第３図イ，ロ及び第４図は本考案に係
る半導体の薄膜気相成長装置の実施例を示す断面
図、第２図はこれらの装置に用いられるパイプの
断面図である。また第５図は従来の半導体薄膜気
相成長装置の断面図である。
符号の説明、１…半導体基板、２…サセプタ、
３…ガス導入口、４…原料ガス、５…排気口、６
…シヤフト、７…冷却ジヤケツト、８…高周波コ
イル、９，１８，１９，２３…パイプ、９ａ…小
孔、１０…遮へい板、１１…パイプ取付治具、１
２…パイプとシヤフトの間隙、１３…反応管。
1, 3A, 3B, and 4 are cross-sectional views showing embodiments of a semiconductor thin film vapor phase growth apparatus according to the present invention, and FIG. 2 is a cross-sectional view of a pipe used in these apparatuses. . Further, FIG. 5 is a sectional view of a conventional semiconductor thin film vapor phase growth apparatus. Explanation of symbols, 1...Semiconductor substrate, 2...Susceptor,
3...Gas inlet, 4...Source gas, 5...Exhaust port, 6
... Shaft, 7... Cooling jacket, 8... High frequency coil, 9, 18, 19, 23... Pipe, 9a... Small hole, 10... Shielding plate, 11... Pipe mounting jig, 1
2... Gap between pipe and shaft, 13... Reaction tube.
補正 昭６１．３．１１
実用新案登録請求の範囲を次のように補正する
。Amendment March 11, 1986 The scope of claims for utility model registration is amended as follows.
【実用新案登録請求の範囲】
縦型反応炉からなる半導体薄膜気相成長装置に
おいて、サセプタの回転シヤフト下部にパイプを
着装すると共に、該パイプに原料ガスを遮断する
遮へい板を設け、かつ、前記パイプの下部に複数
の小孔を穿設し、薄膜形成反応後の排出ガスを、
前記パイプ内孔とシヤフトの間隙を経て前記複数
の小孔から排出するようにしたことを特徴とする
半導体薄膜気相成長装置。[Claims for Utility Model Registration] In a semiconductor thin film vapor phase growth apparatus consisting of a vertical reactor, a pipe is attached to the lower part of a rotating shaft of a susceptor, and a shielding plate is provided on the pipe to block source gas, and Multiple small holes are drilled at the bottom of the pipe, and the exhaust gas after the thin film forming reaction is
A semiconductor thin film vapor phase growth apparatus characterized in that the exhaust is discharged from the plurality of small holes through a gap between the pipe inner hole and the shaft.
Claims (1)
おいて、サセプタの回転シヤフト下部にパイプを
着装すると共に、該パイプに原料ガスを遮断する
遮へい板を設け、かつ、前記パイプの下部に複数
の小孔を穿設してなり、薄膜形成反応後の排出ガ
スを、前記パイプ内孔とシヤフトの間隙を経て前
記複数の小孔から排出するようにしたことを特徴
とする半導体薄膜気相成長装置。 In a semiconductor thin film vapor phase growth apparatus consisting of a vertical reactor, a pipe is attached to the lower part of the rotating shaft of the susceptor, a shielding plate is provided on the pipe to block the raw material gas, and a plurality of small holes are provided in the lower part of the pipe. 1. A semiconductor thin film vapor phase growth apparatus, characterized in that the exhaust gas after a thin film forming reaction is discharged from the plurality of small holes through a gap between the pipe inner hole and the shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7619385U JPS61192443U (en) | 1985-05-22 | 1985-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7619385U JPS61192443U (en) | 1985-05-22 | 1985-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61192443U true JPS61192443U (en) | 1986-11-29 |
Family
ID=30618113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7619385U Pending JPS61192443U (en) | 1985-05-22 | 1985-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61192443U (en) |
-
1985
- 1985-05-22 JP JP7619385U patent/JPS61192443U/ja active Pending
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