JPS5840834U - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPS5840834U JPS5840834U JP13658981U JP13658981U JPS5840834U JP S5840834 U JPS5840834 U JP S5840834U JP 13658981 U JP13658981 U JP 13658981U JP 13658981 U JP13658981 U JP 13658981U JP S5840834 U JPS5840834 U JP S5840834U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- growth equipment
- susceptor
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の気相成長装置の断面図、第2図a1よ第
1図の部分図、bは第1図の装置により得られた膜厚分
布の特性曲線図、第3図は本考案の一実施例の断面図、
第4図aは第3図の部分図、bは第3図の装置により得
られた膜厚分布の一例を示す特性曲線図である。
′
1・・・・・・ベースプレート、2・・・・・・ベルレ
ヤー、3・・・・・・0リング、4・・・・・・止メ金
具、5・・・・・・ノズル、5a・・・・・・噴出口、
6・・・・・・回転軸、7・・・・・・軸受、8・・・
・・・サセプター、9・・・・・・コイルカバー、10
・・・・・・コイル、11・・・・・・反応ガス、12
・・・・・・モーター、13・・・・・・ベルト、14
・・・・・・排出管、15・・・・・・ガス流量調節器
、21・・・・・・基板(ウェハー)。Fig. 1 is a cross-sectional view of a conventional vapor phase growth apparatus, Fig. 2 a1 is a partial view of Fig. 1, b is a characteristic curve of the film thickness distribution obtained by the apparatus shown in Fig. 1, and Fig. 3 is a partial view of Fig. 1. A sectional view of an embodiment of the invention,
FIG. 4a is a partial view of FIG. 3, and FIG. 4b is a characteristic curve diagram showing an example of the film thickness distribution obtained by the apparatus of FIG. 3.
' 1...Base plate, 2...Bell layer, 3...0 ring, 4...Stopping metal fitting, 5...Nozzle, 5a ... spout,
6...Rotating shaft, 7...Bearing, 8...
... Susceptor, 9 ... Coil cover, 10
... Coil, 11 ... Reactant gas, 12
...Motor, 13...Belt, 14
. . . Discharge pipe, 15 . . . Gas flow rate regulator, 21 . . . Substrate (wafer).
Claims (1)
に垂直方向に設けられた反応気体導入用ノズルを有し、
このノズルを二重管構造にして反応気体の導出部を分離
し、それぞれの導出部からの反応気体流量を独立して制
御することを特徴と。 する気相成長装置。[Claims for Utility Model Registration] A susceptor on which a semiconductor substrate is placed has a nozzle for introducing a reactive gas provided in a vertical direction so as to protrude from the center of the susceptor,
This nozzle is characterized by having a double pipe structure, separating the reaction gas outlet sections, and controlling the flow rate of the reaction gas from each outlet section independently. vapor phase growth equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13658981U JPS5840834U (en) | 1981-09-14 | 1981-09-14 | Vapor phase growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13658981U JPS5840834U (en) | 1981-09-14 | 1981-09-14 | Vapor phase growth equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5840834U true JPS5840834U (en) | 1983-03-17 |
Family
ID=29929912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13658981U Pending JPS5840834U (en) | 1981-09-14 | 1981-09-14 | Vapor phase growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5840834U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5381488A (en) * | 1976-12-27 | 1978-07-18 | Matsushita Electric Ind Co Ltd | Gas phase growth apparatus |
JPS5687329A (en) * | 1979-12-18 | 1981-07-15 | Matsushita Electronics Corp | Method of treatment of semiconductor wafer |
-
1981
- 1981-09-14 JP JP13658981U patent/JPS5840834U/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5381488A (en) * | 1976-12-27 | 1978-07-18 | Matsushita Electric Ind Co Ltd | Gas phase growth apparatus |
JPS5687329A (en) * | 1979-12-18 | 1981-07-15 | Matsushita Electronics Corp | Method of treatment of semiconductor wafer |
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