JPH0351833U - - Google Patents
Info
- Publication number
- JPH0351833U JPH0351833U JP11203589U JP11203589U JPH0351833U JP H0351833 U JPH0351833 U JP H0351833U JP 11203589 U JP11203589 U JP 11203589U JP 11203589 U JP11203589 U JP 11203589U JP H0351833 U JPH0351833 U JP H0351833U
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- vapor phase
- phase growth
- exhaust hole
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案に係る縦型気相成長装置の一実
施例を概略的に示す断面図、第２図は同じくガス
滞留状態を概略的に示す説明図、第３図は従来の
縦型気相成長装置を概略的に示す断面図、第４図
は同じく排気孔開口状態を示すベースプレートの
平面図、第５図は同じく従来のガス滞留状態を概
略的に示す説明図である。
１……反応炉、２……ベースプレート、３……
コイルカバー、３ａ……周側面、３１……高周波
加熱コイル、４……石英ベルジヤ、４ａ……内周
側壁面、７……サセプタ、８……ノズル、９……
排気孔、１０……凹溝、１０ａ……内底面、Ｗ…
…半導体基板、Ｇ……反応ガス。
Fig. 1 is a cross-sectional view schematically showing an embodiment of a vertical vapor phase growth apparatus according to the present invention, Fig. 2 is an explanatory view schematically showing the state of gas retention, and Fig. 3 is a conventional vertical vapor growth FIG. 4 is a cross-sectional view schematically showing the vapor phase growth apparatus, FIG. 4 is a plan view of the base plate similarly showing the open state of the exhaust hole, and FIG. 5 is an explanatory diagram schematically showing the conventional gas retention state. 1... Reactor, 2... Base plate, 3...
Coil cover, 3a... Circumferential side, 31... High frequency heating coil, 4... Quartz bell gear, 4a... Inner circumferential side wall, 7... Susceptor, 8... Nozzle, 9...
Exhaust hole, 10...concave groove, 10a...inner bottom surface, W...
...Semiconductor substrate, G...Reactive gas.
Claims (1)
イルが内蔵されたコイルカバーを設置し、このコ
イルカバーの周面を覆うように石英ベルジヤを前
記ベースプレート上に配置して反応炉を形成し、
かつこの反応炉内のサセプタ上に載置された半導
体基板を前記高周波加熱コイルにより誘導加熱す
るとともに、前記ベースプレートに設けた排気孔
から前記反応炉内にノズルを介して噴出され分解
された反応ガスを外部に排出しながらエピタキシ
ヤル気相成長させる縦型気相成長装置において、
前記ベースプレートに設けられる排気孔の形成部
位に、前記コイルカバー及び石英ベルジヤの下端
に沿う環状の凹溝を形成し、この凹溝の内底面に
排気孔を開口させたことを特徴とする縦型気相成
長装置。 (2) 凹溝の深さｌを、コイルカバーの周側面と
石英ベルジヤの内周側壁面との間隔ｄよりも大き
くなる（ｌ≧ｄ）ようにしたことを特徴とする請
求項１記載の縦型気相成長装置。[Claims for Utility Model Registration] (1) A coil cover with a built-in high-frequency heating coil is installed in the center of the base plate, and a quartz bell gear is placed on the base plate to cover the circumferential surface of the coil cover. forming a reactor;
A semiconductor substrate placed on a susceptor in the reactor is heated by induction by the high-frequency heating coil, and a decomposed reaction gas is ejected from an exhaust hole provided in the base plate into the reactor via a nozzle. In a vertical vapor phase growth apparatus that performs epitaxial vapor phase growth while discharging
A vertical type, characterized in that an annular groove is formed along the lower ends of the coil cover and the quartz bell gear at a portion of the base plate where the exhaust hole is formed, and the exhaust hole is opened at the inner bottom surface of the groove. Vapor phase growth equipment. (2) The depth l of the groove is set to be larger than the distance d between the circumferential side of the coil cover and the inner circumferential wall of the quartz bell gear (l≧d). Vertical vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11203589U JPH0351833U (en) | 1989-09-27 | 1989-09-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11203589U JPH0351833U (en) | 1989-09-27 | 1989-09-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0351833U true JPH0351833U (en) | 1991-05-20 |
Family
ID=31660488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11203589U Pending JPH0351833U (en) | 1989-09-27 | 1989-09-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0351833U (en) |
-
1989
- 1989-09-27 JP JP11203589U patent/JPH0351833U/ja active Pending
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