JPS61144633U - - Google Patents
Info
- Publication number
- JPS61144633U JPS61144633U JP2816085U JP2816085U JPS61144633U JP S61144633 U JPS61144633 U JP S61144633U JP 2816085 U JP2816085 U JP 2816085U JP 2816085 U JP2816085 U JP 2816085U JP S61144633 U JPS61144633 U JP S61144633U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- container
- recess
- positioning
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
Description
第１図はこの考案に用いる第１実施例のサセプ
タの要部拡大断面図、第２図は同じく第２実施例
の要部拡大断面図である。第３図は縦型エピタキ
シヤル成長装置の断面図である。
１，８……容器、１４，１９……サセプタ、１
５……カーボン基板、１６……凹部、１７……凹
凸面、１８……炭化シリコン層。
FIG. 1 is an enlarged sectional view of a main part of a susceptor according to a first embodiment used in this invention, and FIG. 2 is an enlarged sectional view of a main part of a susceptor according to a second embodiment. FIG. 3 is a sectional view of a vertical epitaxial growth apparatus. 1, 8... Container, 14, 19... Susceptor, 1
5... Carbon substrate, 16... Concavity, 17... Uneven surface, 18... Silicon carbide layer.
Claims (1)
器内に配設された半導体ウエーハ位置決め用凹部
を有するサセプタと、このサセプタを高周波誘導
によつて加熱する高周波コイルとを備えた半導体
製造装置において、 前記サセプタは、半導体ウエーハ位置決め用の
凹部を有するカーボン基板の少なくとも一部に凹
凸面が形成され、表面全面が炭化シリコン層で被
覆されていることを特徴とする半導体製造装置。[Claims for Utility Model Registration] A container for forming a predetermined atmosphere, a susceptor disposed in the container and having a recess for positioning a semiconductor wafer, and a high-frequency coil for heating the susceptor by high-frequency induction. In the semiconductor manufacturing apparatus, the susceptor is characterized in that an uneven surface is formed on at least a part of a carbon substrate having a recess for positioning a semiconductor wafer, and the entire surface is covered with a silicon carbide layer. Manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2816085U JPS61144633U (en) | 1985-02-27 | 1985-02-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2816085U JPS61144633U (en) | 1985-02-27 | 1985-02-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61144633U true JPS61144633U (en) | 1986-09-06 |
Family
ID=30525786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2816085U Pending JPS61144633U (en) | 1985-02-27 | 1985-02-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61144633U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0623240U (en) * | 1992-08-21 | 1994-03-25 | 日新電機株式会社 | Susceptor for semiconductor manufacturing equipment |
| JPH10223546A (en) * | 1997-02-10 | 1998-08-21 | Toshiba Ceramics Co Ltd | Susceptor for chemical vapor deposition |
-
1985
- 1985-02-27 JP JP2816085U patent/JPS61144633U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0623240U (en) * | 1992-08-21 | 1994-03-25 | 日新電機株式会社 | Susceptor for semiconductor manufacturing equipment |
| JPH10223546A (en) * | 1997-02-10 | 1998-08-21 | Toshiba Ceramics Co Ltd | Susceptor for chemical vapor deposition |
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