JPH032630U - - Google Patents

Info

Publication number
JPH032630U
JPH032630U JP6355289U JP6355289U JPH032630U JP H032630 U JPH032630 U JP H032630U JP 6355289 U JP6355289 U JP 6355289U JP 6355289 U JP6355289 U JP 6355289U JP H032630 U JPH032630 U JP H032630U
Authority
JP
Japan
Prior art keywords
susceptor
wafer
sloped
storage hole
placing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6355289U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6355289U priority Critical patent/JPH032630U/ja
Publication of JPH032630U publication Critical patent/JPH032630U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本考案の一実施例に係る半導体製造
装置の概略断面図、第2図は、同装置に用いられ
るサセプタの拡大半断面図、第3図は従来装置の
概略断面図、第4図は同従来装置に用いられるサ
セプタの斜視図である。 1……外側ベルジヤ、1′……内側ベルジヤ、
10……サセプタ、11……ウエーハ収納穴、W
……半導体ウエーハ。
1 is a schematic cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged half-sectional view of a susceptor used in the same apparatus, and FIG. 3 is a schematic cross-sectional view of a conventional apparatus. FIG. 4 is a perspective view of a susceptor used in the conventional device. 1...outer bell gear, 1'...inner bell gear,
10...Susceptor, 11...Wafer storage hole, W
...Semiconductor wafer.

Claims (1)

【実用新案登録請求の範囲】 ベルジヤ内のサセプタに半導体ウエーハを載置
し、加熱しながら処理ガスを供給して該ウエーハ
にエピタキシヤル成長層を形成する装置において
、 上記サセプタを、サセプタ本体のウエーハ収納
穴の底面にサセプタの外周側が高くなるような傾
きをつけたことを特徴とする半導体製造装置。
[Claims for Utility Model Registration] In an apparatus for placing a semiconductor wafer on a susceptor in a bell gear and supplying a processing gas while heating it to form an epitaxial growth layer on the wafer, A semiconductor manufacturing device characterized in that the bottom surface of the storage hole is sloped so that the outer peripheral side of the susceptor is higher.
JP6355289U 1989-05-31 1989-05-31 Pending JPH032630U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6355289U JPH032630U (en) 1989-05-31 1989-05-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6355289U JPH032630U (en) 1989-05-31 1989-05-31

Publications (1)

Publication Number Publication Date
JPH032630U true JPH032630U (en) 1991-01-11

Family

ID=31593706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6355289U Pending JPH032630U (en) 1989-05-31 1989-05-31

Country Status (1)

Country Link
JP (1) JPH032630U (en)

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